@article{CTT100646149,
author = {H. Mashiko and T. Oshima and A. Ohtomo},
title = {Epitaxial structures of band-gap-engineered α-(CrxFe1-x)2O3 (0 ≤x≤1) films grown on C-plane sapphire},
journal = {Japanese Journal of Applied Physics},
year = 2012,
}
@article{CTT100642859,
author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo},
title = {Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition},
journal = {Journal of Crystal Growth},
year = 2012,
}
@inproceedings{CTT100643764,
author = {A. Ohtomo},
title = {Epitaxial syntheses of functioning oxide interface and nanomaterials},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100643779,
author = {H. Mashiko and E.Sakai and H. Kumigashira and T. Oshima and A. Ohtomo},
title = {遷移金属酸化物混晶におけるバンドギャップ狭帯化の起源},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100644063,
author = {A. Mukai and T. Oshima and A. Ohtomo},
title = {カソードルミネッセンス法によるAl2xGa2-2xO3薄膜の発光特性評価},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100644065,
author = {K. Yokoyama and M. Niwa and T. Oshima and A. Ohtomo},
title = {パルスレーザ堆積法によるLiTi2O4 薄膜のエピタキシャル成長},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100644110,
author = {A. Ohtomo},
title = {酸化物半導体材料・デバイスの基礎と最新動向},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100644312,
author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo},
title = {Mist chemical vapor deposition of γ-phase Ga2O3 thin films},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640162,
author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo},
title = {Epitaxial stabilization of gamma-phase Ga2O3 thin films by Mist CVD},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100639699,
author = {A. Ohtomo and S. Chakraverty and H. Mashiko and T. Oshima and M. Kawasaki},
title = {Design and synthesis of ubiquitous-elements-based novel magnetic oxides},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100644109,
author = {A. Ohtomo},
title = {酸化物半導体の基礎と薄膜・デバイス研究動向},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100639445,
author = {A. Ohtomo},
title = {薄膜積層構造による遷移金属酸化物の光電変換機能開発},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100646792,
author = {A. Ohtomo and S. Chakraverty and H. Mashiko and T. Oshima and M. Kawasaki},
title = {Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites},
booktitle = {MRS Proceedings},
year = 2012,
}
@inproceedings{CTT100635259,
author = {A. Ohtomo and S. Chakraverty and M. Kawasaki},
title = {Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100635903,
author = {S. Fujita and M. Higashiwaki and K. Sasaki and A. Kuramata, T and Masui and S. Yamakoshi and T. Oshima and A. Ohtomo},
title = {ワイドギャップ半導体酸化ガリウムの基本特性と応用},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100634775,
author = {A. Mukai and T. Nakazono and T. Oshima and A. Ohtomo},
title = {Ga2O3の結晶多形とヘテロエピ構造:β-Ga2O3/(0001)α-Al2O3},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100634015,
author = {S. Fujita and M. Higashiwaki and K. Sasaki and A. Kuramata and T. Masui and S. Yamawaki and T. Oshima and A. Ohtomo},
title = {酸化ガリウム半導体の機能とデバイス応用},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100634766,
author = {J. Noda and H. Mashiko and T. Oshima and A. Ohtomo},
title = {α-(V1-xCrx)2O3薄膜の作製と光学特性評価},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100633968,
author = {A. Ohtomo},
title = {ペロブスカイト型鉄酸化物薄膜の原子秩序構造と磁性},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100634772,
author = {A. Ohtomo},
title = {Quantum transport at polar oxide interfaces},
booktitle = {},
year = 2012,
}
@misc{CTT100646680,
author = {A. Ohtomo},
title = {金属酸化物ヘテロ接合の界面伝導},
year = 2012,
}
@misc{CTT100692018,
author = {Akira Ohtomo and Takayoshi OSHIMA},
title = {Ga2O3系HEMT},
howpublished = {PublishedPatent},
year = 2015,
month = {},
note = {特願2013-532669(2012/09/07), 特開(再表)2013/035841(2015/03/23)}
}