@article{CTT100646149, author = {H. Mashiko and T. Oshima and A. Ohtomo}, title = {Epitaxial structures of band-gap-engineered α-(CrxFe1-x)2O3 (0 ≤x≤1) films grown on C-plane sapphire}, journal = {Japanese Journal of Applied Physics}, year = 2012, } @article{CTT100642859, author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo}, title = {Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition}, journal = {Journal of Crystal Growth}, year = 2012, } @inproceedings{CTT100643764, author = {A. Ohtomo}, title = {Epitaxial syntheses of functioning oxide interface and nanomaterials}, booktitle = {}, year = 2012, } @inproceedings{CTT100643779, author = {H. Mashiko and E.Sakai and H. Kumigashira and T. Oshima and A. Ohtomo}, title = {遷移金属酸化物混晶におけるバンドギャップ狭帯化の起源}, booktitle = {}, year = 2012, } @inproceedings{CTT100644063, author = {A. Mukai and T. Oshima and A. Ohtomo}, title = {カソードルミネッセンス法によるAl2xGa2-2xO3薄膜の発光特性評価}, booktitle = {}, year = 2012, } @inproceedings{CTT100644065, author = {K. Yokoyama and M. Niwa and T. Oshima and A. Ohtomo}, title = {パルスレーザ堆積法によるLiTi2O4 薄膜のエピタキシャル成長}, booktitle = {}, year = 2012, } @inproceedings{CTT100644110, author = {A. Ohtomo}, title = {酸化物半導体材料・デバイスの基礎と最新動向}, booktitle = {}, year = 2012, } @inproceedings{CTT100644312, author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo}, title = {Mist chemical vapor deposition of γ-phase Ga2O3 thin films}, booktitle = {}, year = 2012, } @inproceedings{CTT100640162, author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo}, title = {Epitaxial stabilization of gamma-phase Ga2O3 thin films by Mist CVD}, booktitle = {}, year = 2012, } @inproceedings{CTT100639699, author = {A. Ohtomo and S. Chakraverty and H. Mashiko and T. Oshima and M. Kawasaki}, title = {Design and synthesis of ubiquitous-elements-based novel magnetic oxides}, booktitle = {}, year = 2012, } @inproceedings{CTT100644109, author = {A. Ohtomo}, title = {酸化物半導体の基礎と薄膜・デバイス研究動向}, booktitle = {}, year = 2012, } @inproceedings{CTT100639445, author = {A. Ohtomo}, title = {薄膜積層構造による遷移金属酸化物の光電変換機能開発}, booktitle = {}, year = 2012, } @inproceedings{CTT100646792, author = {A. Ohtomo and S. Chakraverty and H. Mashiko and T. Oshima and M. Kawasaki}, title = {Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites}, booktitle = {MRS Proceedings}, year = 2012, } @inproceedings{CTT100635259, author = {A. Ohtomo and S. Chakraverty and M. Kawasaki}, title = {Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites}, booktitle = {}, year = 2012, } @inproceedings{CTT100635903, author = {S. Fujita and M. Higashiwaki and K. Sasaki and A. Kuramata, T and Masui and S. Yamakoshi and T. Oshima and A. Ohtomo}, title = {ワイドギャップ半導体酸化ガリウムの基本特性と応用}, booktitle = {}, year = 2012, } @inproceedings{CTT100634775, author = {A. Mukai and T. Nakazono and T. Oshima and A. Ohtomo}, title = {Ga2O3の結晶多形とヘテロエピ構造:β-Ga2O3/(0001)α-Al2O3}, booktitle = {}, year = 2012, } @inproceedings{CTT100634015, author = {S. Fujita and M. Higashiwaki and K. Sasaki and A. Kuramata and T. Masui and S. Yamawaki and T. Oshima and A. Ohtomo}, title = {酸化ガリウム半導体の機能とデバイス応用}, booktitle = {}, year = 2012, } @inproceedings{CTT100634766, author = {J. Noda and H. Mashiko and T. Oshima and A. Ohtomo}, title = {α-(V1-xCrx)2O3薄膜の作製と光学特性評価}, booktitle = {}, year = 2012, } @inproceedings{CTT100633968, author = {A. Ohtomo}, title = {ペロブスカイト型鉄酸化物薄膜の原子秩序構造と磁性}, booktitle = {}, year = 2012, } @inproceedings{CTT100634772, author = {A. Ohtomo}, title = {Quantum transport at polar oxide interfaces}, booktitle = {}, year = 2012, } @misc{CTT100646680, author = {A. Ohtomo}, title = {金属酸化物ヘテロ接合の界面伝導}, year = 2012, } @misc{CTT100692018, author = {Akira Ohtomo and Takayoshi OSHIMA}, title = {Ga2O3系HEMT}, howpublished = {PublishedPatent}, year = 2015, month = {}, note = {特願2013-532669(2012/09/07), 特開(再表)2013/035841(2015/03/23)} }