@article{CTT100786579,
  author = {Junghwan Kim and Koji Yamamoto and Soshi Iimura and Shigenori Ueda and Hideo Hosono},
  title = {Electron Affinity Control of Amorphous Oxide Semiconductors and Its Applicability to Organic Electronics},
  journal = {Advanced Materials Interfaces},
  year = 2018,
}

@article{CTT100784506,
  author = {Biao Wan and Yangfan Lu and Zewen Xiao and Yoshinori Muraba and Junghwan Kim and Dajian Huang and Lailei Wu and Huiyang Gou and Jingwu Zhang and Faming Gao and Ho-kwang Mao and HIDEO HOSONO},
  title = {Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification},
  journal = {npj Comput. Matter},
  year = 2018,
}

@article{CTT100786575,
  author = {Taehwan Jun and Kihyung Sim and Soshi Iimura and Masato Sasase and Hayato Kamioka and Junghwan Kim and Hideo Hosono},
  title = {Lead-Free Highly Efficient Blue-Emitting Cs3Cu2I5 with 0D Electronic Structure},
  journal = {Advanced Materials},
  year = 2018,
}

@article{CTT100795943,
  author = {Keisuke Ide and Yuki Futakado and Naoto Watanabe and Junghwan Kim and Takayoshi Katase and Hidenori Hiramatsu and Hideo Hosono and Toshio Kamiya},
  title = {Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide},
  journal = {Phys. Status Solidi A},
  year = 2018,
}

@article{CTT100760938,
  author = {Taehwan Jun and Junghwan Kim and Masato Sasase and Hideo Hosono},
  title = {Material Design of p-Type Transparent Amorphous Semiconductor, Cu–Sn–I},
  journal = {Advanced Materials},
  year = 2018,
}

@article{CTT100755528,
  author = {Hongsheng Yang and Junghwan Kim and Koji Yamamoto and Xing Xing and Hideo Hosono},
  title = {Surface tailoring of newly developed amorphous Zn-Si-O thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells},
  journal = {Applied Surface Science},
  year = 2018,
}

@article{CTT100759459,
  author = {Nobuhiro Nakamura and Junghwan Kim and Hideo Hosono},
  title = {Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?},
  journal = {Advanced Electronic Materials},
  year = 2018,
}

@inproceedings{CTT100779486,
  author = {西間木祐紀 and 井手啓介 and 渡邊脩人 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779483,
  author = {井手啓介 and 二角勇毅 and 渡邉脩人 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779488,
  author = {渡邊脩人 and 井手啓介 and 片瀬貴義 and 笹瀬雅人 and 戸田喜丈 and 金正煥 and 上田茂典 and 堀場弘司 and 組頭広志 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100771907,
  author = {Junghwan kim and Hideo Hosono},
  title = {Development of Ultra-Wide Bandgap Amorphous Oxide Semiconductors for Future Electronics},
  booktitle = {Meeting Abstracts. The Electrochemical Society},
  year = 2018,
}

@inproceedings{CTT100771905,
  author = {Joonho Bang and Satoru Matsuishi and Junghwan Kim and Hideo Hosono},
  title = {Hydrogen Anion and Subgap States in Amorphous In–Ga–Zn–O Thin Films},
  booktitle = {IMID 2018 DIGEST},
  year = 2018,
}

@inproceedings{CTT100771906,
  author = {Taehwan Jun and Kota Aoyama and Joonho Bang and Junghwan Kim and Hideo Hosono},
  title = {Solution-Processable P-type Transparent Amorphous Semiconductor for Flexible Electronics},
  booktitle = {AM-FPD 2018, IEEE},
  year = 2018,
}

@inproceedings{CTT100768275,
  author = {Junghwan Kim and Taehwan Jun and Hideo Hosono},
  title = {New P‐type Amorphous Semiconductor with High Transparency and High Mobility of 9 cm2/Vs for Next‐Generation Displays},
  booktitle = {SID international symposium digest of technical papers},
  year = 2018,
}

@inproceedings{CTT100773083,
  author = {Taehwan Jun and Junghwan Kim and Hideo Hosono},
  title = {Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm2/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773082,
  author = {Koji Yamamoto and Junghwan Kim and HIDEO HOSONO},
  title = {Development of New Amorphous Oxide Semiconductors with Deep Conduction Band Minimum and Their OLED Application},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779497,
  author = {二角勇毅 and 渡邉脩人 and 井手啓介 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索},
  booktitle = {},
  year = 2018,
}

@misc{CTT100845252,
  author = {HIDEO HOSONO and Junghwan Kim and Joonho Bang and Hideya Kumomi},
  title = {半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット},
  howpublished = {PublishedPatent},
  year = 2020,
  month  = {},
  note   = {特願2019-557079(2018/10/30), 再表2019/107046(2020/12/17)}
}


@misc{CTT100881805,
  author = {HIDEO HOSONO and Junghwan Kim},
  title = {化合物半導体の量子ドットを含む膜},
  howpublished = {RegisteredPatent},
  year = 2022,
  month  = {},
  note   = {特願2018-153628(2018/08/17), 特開2019-041104(2019/03/14), 特許第7073981号(2022/05/16)}
}


@misc{CTT100793189,
  author = {HIDEO HOSONO and Junghwan Kim},
  title = {有機ＥＬ素子},
  howpublished = {PublishedPatent},
  year = 2018,
  month  = {},
  note   = {特願2017-100081(2017/05/19), 特開2018-195512(2018/12/06)}
}