@article{CTT100855585,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Haruki Tanigawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100855454,
  author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo},
  title = {Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2020,
}

@article{CTT100828639,
  author = {Haruki Tanigawa and Kentaro Matsuura and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100822934,
  author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@inproceedings{CTT100855937,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Shigetaka Tomiya and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855932,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855933,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829205,
  author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 小椋 厚志 and Hitoshi Wakabayashi},
  title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
  booktitle = {},
  year = 2020,
}