@article{CTT100738837,
  author = {K. Ohsawa and S. Netsu and N. Kise and S. Noguchi and Y. Miyamoto},
  title = {Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks},
  journal = {Jpn. J. Appl. Phys.},
  year = 2017,
}

@inproceedings{CTT100747612,
  author = {Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {HfS2/MoS2 ヘテロジャンクションの温度依存電流特性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747601,
  author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735618,
  author = {Toru Kanazawa and Tomohiro Amemiya and Netsu Seikou and Vikrant Upadhyaya and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740854,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735914,
  author = {Netsu Seikou and Toru Kanazawa and Vikrant Upadhyaya and ウワンノー ティーラユット and Tomohiro Amemiya and 長汐 晃輔 and YASUYUKI MIYAMOTO},
  title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740944,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響},
  booktitle = {信学技報},
  year = 2017,
}