@article{CTT100693011,
  author = {K. Ohashi and M. Fujimatsu and S. Iwata and Y. Miyamoto},
  title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@inproceedings{CTT100717934,
  author = {S. Iwata and W. Lin and K. Fukuda and Y. Miyamoto},
  title = {Design of drain for low off current in GaAsSb/InGaAs tunnel FETs},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721929,
  author = {Y. Miyamoto and M. Fujimatsu and K. Ohashi and A. Yukimachi and S. Iwata},
  title = {Steep subthreshold slope in InGaAs MOSFET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721938,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
  title = {InGaAs channel for low supply voltage},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693235,
  author = {Shinjiro Iwata and Kazumi Ohashi and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性},
  booktitle = {},
  year = 2015,
}