@article{CTT100911397,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kazuki Okamoto and Kuniyuki Kakushima and Tomoyuki Koganezawa and Osami Sakata and Hiroshi Funakubo},
  title = {Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes},
  journal = {J. Appl. Phys.},
  year = 2023,
}

@article{CTT100911395,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Takao Shimizu and Kazuki Okamoto and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Invariant polarization switching kinetics in an (Al0.2Sc0.8)N film with frequency and temperature},
  journal = {Appl. Phys. Lett.},
  year = 2023,
}

@article{CTT100890868,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy},
  journal = {ACS Appl. Electron. Mater.},
  year = 2022,
}

@article{CTT100890774,
  author = {Masato Uehara and Ryoichi Mizutani and Shinnosuke Yasuoka and Takao Shimizu and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN},
  journal = {Appl. Phys. Exp.},
  year = 2022,
}

@article{CTT100889889,
  author = {Shinnosuke YASUOKA and Ryoichi MIZUTANI and Reika OTA and Takahisa SHIRAISHI and Takao SHIMIZU and Shintaro YASUI and Yoshitaka EHARA and Ken NISHIDA and Masato UEHARA and Hiroshi YAMADA and Morito AKIYAMA and Yasuhiko IMAI and Osami SAKATA and Hiroshi FUNAKUBO},
  title = {Enhancement of crystal anisotropy and ferroelectricity by decreasing thickness in (Al,Sc)N films},
  journal = {J. Ceram. Soc. Jpn.},
  year = 2022,
}

@article{CTT100864854,
  author = {Masato Uehara and Ryoichi Mizutani and Shinnosuke Yasuoka and Takahisa Shiraishi and Takao Shimizu and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Demonstration of ferroelectricity in GaN-based thin film},
  journal = {Appl. Phys. Lett.},
  year = 2021,
}

@article{CTT100864727,
  author = {Shinnosuke Yasuoka and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Impact of deposition temperature on crystal structure and ferroelectric properties of (Al1-xScx)N films prepared by sputtering method},
  journal = {Phys. Status Solidi A 2021},
  year = 2021,
}

@article{CTT100864826,
  author = {Ryoichi Mizutani and Shinnosuke Yasuoka and Takahisa Shiraishi and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Osami Sakata and Hiroshi Funakubo},
  title = {Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC/cm2 around 10 nm in thickness},
  journal = {Appl. Phys. Exp.},
  year = 2021,
}

@article{CTT100849031,
  author = {Shinnosuke Yasuoka and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Yoshiomi Hiranaga and Yasuo Cho and Hiroshi Funakubo},
  title = {Effects of deposition conditions on the ferroelectric properties of (Al1-xScx)N thin films},
  journal = {J. Appl. Phys.},
  year = 2020,
}

@inproceedings{CTT100903681,
  author = {Shinnosuke Yasuoka and Kazuki Okamoto and Shimizu Takao and 松井 尚子 and 入澤 寿和 and 恒川 孝二 and HIROSHI FUNAKUBO},
  title = {種々の組成の(Al, Sc)N多層膜のスイッチング特性評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901299,
  author = {Nachi Chaya and Koji Hirai and Shinnosuke Yasuoka and Kazuki Okamoto and 山岡和希子 and 井上ゆか梨 and HIROSHI FUNAKUBO},
  title = {スパッタリング法によるHfO2-CeO2強誘電体厚膜の非加熱合成},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901301,
  author = {Shinnosuke Yasuoka and Reika Ota and Kazuki Okamoto and Shimizu Takao and HIROSHI FUNAKUBO},
  title = {NbN電極上に作製したエピタキシャル(Al, Sc)N膜の電気特性評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901296,
  author = {Yoshiki Maekawa and Koji Hirai and Shinnosuke Yasuoka and Kazuki Okamoto and Shimizu Takao and HIROSHI FUNAKUBO},
  title = {様々な基板上におけるY:HfO2エピタキシャル膜の合成と評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901294,
  author = {Yoshiki Maekawa and Koji Hirai and Shinnosuke Yasuoka and Kazuki Okamoto and Shimizu Takao and HIROSHI FUNAKUBO},
  title = {種々の基板上におけるHfO2基エピタキシャル膜の合成と評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901292,
  author = {Miki Nakahata and Kazuki Okamoto and 胡雨弦 and Shinnosuke Yasuoka and Keisuke Ishihama and HIROSHI FUNAKUBO},
  title = {正方晶Pb(Zr,Ti)O3薄膜における圧電特性の膜厚依存性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901291,
  author = {Nachi Chaya and Koji Hirai and Shinnosuke Yasuoka and Kazuki Okamoto and HIROSHI FUNAKUBO},
  title = {フレキシブルデバイスに向けたHfO2基強誘電体厚膜の室温合成と圧電性の評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100904716,
  author = {Masato Uehara and Ryoichi Mizutani and Shinnosuke Yasuoka and Takao Shimizu and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Demonstration of Ferroelectric Properties in GaN Alloyed with Sc},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100904715,
  author = {Ryo Takahashi and Yoshitaka Ehara and Yosuke Hamasaki and Shintaro Yasui and Shinnosuke Yasuoka and Hiroshi Funakubo and Shinya Sawai and Ken Nishida},
  title = {Crystal Structure and Electric Properties of (100) Ba(ZrxTi1-x)O3 Thin Films on MgO Substrates by Pulse Laser Deposition Technique},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902544,
  author = {Hiroshi Funakubo and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Akinori Tateyama and Reika Ota and Kazuki Okamoto and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama},
  title = {Thickness Scaling and Low Voltage Operation of Ferroelectric (Al1-xScx)N Films Prepared by Sputtering Method},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100904701,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kuniyuki Kakushima and Hiroshi Funakubo},
  title = {Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901289,
  author = {Reika Ota and Shinnosuke Yasuoka and Kazuki Okamoto and 上岡義弘 and 楠瀬好郎 and 召田雅実 and HIROSHI FUNAKUBO},
  title = {(Al1-x-yGaxScy)N薄膜の結晶構造および強誘電性},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902893,
  author = {高橋良 and Yoshitaka Ehara and 濵嵜容丞 and 澤井眞也 and Shintaro Yasui and Shinnosuke Yasuoka and HIROSHI FUNAKUBO and ken nishida},
  title = {MgO基板上に製膜したBa(ZrxTi1-x)O3の結晶構造と誘電特性},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902980,
  author = {上原雅人 and Ryoichi Mizutani and Shinnosuke Yasuoka and Shimizu Takao and 山田浩志 and 秋山守人 and HIROSHI FUNAKUBO},
  title = {Sc添加GaＮ薄膜の強誘電性へのSc濃度と温度の影響},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901287,
  author = {Shinnosuke Yasuoka and Reika Ota and Kazuki Okamoto and Keisuke Ishihama and Shimizu Takao and Kuniyuki KAKUSHIMA and 上原雅人 and 山田浩志 and 秋山守人 and 小金澤智之 and L. S. R. Kumara and Okkyun Seo and O. Sakata and HIROSHI FUNAKUBO},
  title = {メモリ応用に向けた(Al, Sc)N膜の薄膜化の検討},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901288,
  author = {Kazuki Okamoto and Shinnosuke Yasuoka and Reika Ota and HIROSHI FUNAKUBO and 松井尚子 and 入澤寿和 and 恒川孝二},
  title = {水素ガス熱処理が(Al,Sc)N 薄膜の強誘電特性へ及ぼす影響},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902550,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Establishment of Control Method for Ferroelectric Properties in (Al1-xScx)N Films},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875597,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Shimizu Takao and Shintaro Yasui and Yoshitaka Ehara and ken nishida and 上原雅人 and 山田浩志 and 秋山守人 and 今井康彦 and Osami Sakata and HIROSHI FUNAKUBO},
  title = {薄膜化による(Al,Sc)N膜の結晶異方性及び強誘電特性の向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100874847,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and HIROSHI FUNAKUBO},
  title = {種々の電極を用いた(Al1-x,Scx)N薄膜の強誘電性評価},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875596,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Shimizu Takao and 上原雅人 and 山田浩志 and 秋山守人 and HIROSHI FUNAKUBO},
  title = {面内配向及び熱歪による(Al,Sc)N薄膜の強誘電特性の制御},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100874660,
  author = {Ryoichi Mizutani and Shinnosuke Yasuoka and Takao Shimizu and Hiroshi Funakubo},
  title = {Temperature dependence of ferroelectricity in (Al1-xScx)N thin films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100865364,
  author = {Hiroshi Funakubo and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Akinori Tateyama and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Yoshiomi Hiranaga and Yasuo Cho},
  title = {Control of Ferroelectric Property in (Al1-xScx)N Films Prepared by Sputtering Method},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100874647,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Shimizu Takao and 上原雅人 and 山田浩志 and 秋山守人 and HIROSHI FUNAKUBO},
  title = {強誘電体(Al1-xScx)N薄膜の結晶構造と電気特性の関係},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100865390,
  author = {Shinnosuke Yasuoka and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Yoshiomi Hiranaga and Yasuo Cho and Hiroshi Funakubo},
  title = {Downscaling and low temperature deposition of ferroelectric (Al1-xScx)N thin films deposited by dual sputtering},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100853357,
  author = {Ryoichi Mizutani and Shinnosuke Yasuoka and Shimizu Takao and HIROSHI FUNAKUBO},
  title = {(ScxAl1-x)N薄膜の強誘電性の温度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100853348,
  author = {Shinnosuke Yasuoka and Shimizu Takao and HIROSHI FUNAKUBO},
  title = {エピタキシャル(Al1-xScx)N膜の作製と強誘電性評価},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100853246,
  author = {Shinnosuke Yasuoka and Shimizu Takao and 上原雅人 and 山田浩志 and 秋山守人 and HIROSHI FUNAKUBO},
  title = {スパッタリング法で室温合成した(Al1-xScx)N膜の強誘電性評価},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852901,
  author = {安岡慎之介 and 清水荘雄 and 上原雅人 and 山田浩志 and 秋山守人 and 舟窪浩},
  title = {二次元スパッタリング法により作製した(Al1-xScx)N 薄膜の強誘電特性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100821818,
  author = {上原雅人 and Shinnosuke Yasuoka and Takao Shimizu and 山田浩志 and 秋山守人 and HIROSHI FUNAKUBO},
  title = {スパッタリング法で作製したGaNおよびSc添加GaN薄膜の強誘電性評価},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100821817,
  author = {Shinnosuke Yasuoka and Takao Shimizu and 上原雅人 and HIROSHI FUNAKUBO},
  title = {(Al1-xScx)N薄膜の強誘電特性に及ぼす製膜条件の影響},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100821779,
  author = {Shinnosuke Yasuoka and Takao Shimizu and 上原雅人 and HIROSHI FUNAKUBO},
  title = {二元同時スパッタリング法によるAl1-xScxN薄膜の作製と強誘電性評価},
  booktitle = {},
  year = 2020,
}

@misc{CTT100876025,
  author = {HIROSHI FUNAKUBO and Shinnosuke Yasuoka and Ryoichi Mizutani and Shimizu Takao},
  title = {ウルツ鉱構造窒化物の強誘電性},
  year = 2021,
}

@misc{CTT100876028,
  author = {HIROSHI FUNAKUBO and Shinnosuke Yasuoka and Shimizu Takao},
  title = {ウルツ鉱構造窒化物の強誘電性 ―強誘電体の脱ペロブスカイト構造酸化物―},
  year = 2021,
}

@misc{CTT100836410,
  author = {Shinnosuke Yasuoka and Takao Shimizu and HIROSHI FUNAKUBO},
  title = {窒化物圧電体膜の微構造評価},
  year = 2020,
}

@misc{CTT100909451,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  year = ,
}

@misc{CTT100909450,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  year = ,
}

@misc{CTT100909449,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  year = ,
}

@misc{CTT100908575,
  author = {HIROSHI FUNAKUBO and Takahisa Shiraishi and Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota},
  title = {窒化アルミニウムスカンジウム膜及び強誘電体素子},
  howpublished = {PublishedPatent},
  year = 2023,
  month  = {},
  note   = {PCT/JP2023/013181(2023/03/30), WO 2023/190869(2023/10/05)}
}


@misc{CTT100900373,
  author = {HIROSHI FUNAKUBO and TakaoShimizu and Shinnosuke Yasuoka},
  title = {強誘電性薄膜、それを用いた電子素子および強誘電性薄膜の製造方法},
  howpublished = {RegisteredPatent},
  year = 2023,
  month  = {},
  note   = {特願2021-567693(2020/12/25), 特許第7260863号(2023/04/11)}
}




@phdthesis{CTT100909451,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  school = {Tokyo Institute of Technology},
  year = ,
}

@phdthesis{CTT100909450,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  school = {Tokyo Institute of Technology},
  year = ,
}

@phdthesis{CTT100909449,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  school = {Tokyo Institute of Technology},
  year = ,
}