@article{CTT100634062,
  author = {Mutsumi Kimura and Takayuki Hasegawa and Keisuke Ide and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing},
  journal = {IEEE Electron Dev. Lett.},
  year = 2012,
}

@article{CTT100634065,
  author = {Keisuke Ide and Yutomo Kikuchi and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors},
  journal = {Thin Solid Films},
  year = 2012,
}

@article{CTT100634902,
  author = {Keisuke Ide and Kenji Nomura and Hidenori Hiramatsu and Toshio Kamiya and Hideo Hosono},
  title = {Structural relaxation in amorphous oxide semiconductor},
  journal = {J. Appl. Phys},
  year = 2012,
}

@article{CTT100640580,
  author = {Mutsumi Kimura and Takayuki Hasegawa and Keisuke Ide and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing},
  journal = {Solid-State Electronics},
  year = 2012,
}

@inproceedings{CTT100804328,
  author = {Hasegwa, T. and Kimura, M. and Keisuke Ide and Nomura, K. and Kamiya, T. and HIDEO HOSONO},
  title = {Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering},
  booktitle = {Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012},
  year = 2012,
}