@article{CTT100905133,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination},
  journal = {Applied Physics Express},
  year = 2022,
}

@article{CTT100896543,
  author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung-Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2022,
}

@article{CTT100905134,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100905136,
  author = {Ryota Shibukawa and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100905135,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Yi Chang and Kuniyuki Kakushima},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100905137,
  author = {Atsuki Miyata and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima and Takuya Hoshii},
  title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100883067,
  author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874628,
  author = {M. Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and Yoshiaki Daigo and Ichiro Mizushima and T. Yoda and K. Kakushima},
  title = {Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875619,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100905138,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100880933,
  author = {Atsuki Miyata and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100883068,
  author = {Ryota Shibukawa and Sung Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875614,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100905139,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875615,
  author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
  title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@inproceedings{CTT100905149,
  author = {Shonosuke Kimura and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896546,
  author = {Kazuto Mizutani and Takuya Hoshii and Takamasa Kawanago and Iriya Muneta and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896549,
  author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Hitoshi Wakabayashi},
  title = {アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875814,
  author = {Kyotaro Ano and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Takashi Yoda and Kuniyuki KAKUSHIMA},
  title = {Electrical Characteristics of gated SiC pn diode},
  booktitle = {},
  year = 2022,
}