@article{CTT100884259, author = {Julian Sasaki and Shota Namba and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai}, title = {Highly efficient spin current source using BiSb topological insulator / NiO bilayers}, journal = {Japanese Journal of Applied Physics}, year = 2022, } @article{CTT100884250, author = {H. H. Huy and J. Sasaki and N. H. D. Khang and S. Namba and P. N. Hai and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and R. Nagabhirava and M. Ho and H. Takano}, title = {Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application}, journal = {IEEE Transactions on Magnetics}, year = 2022, } @article{CTT100862848, author = {J. Sasaki and H. H. Huy and N. H. D. Khang and P. N. Hai and Q. Le and B. York and X. Liu and S. Le and C. Hwang and M. Ho and H. Takano}, title = {Improvement of the effective spin Hall angle by inserting an interfacial layer in sputtered BiSb topological insulator (bottom)/ferromagnet with in-plane magnetization}, journal = {IEEE Transactions on Magnetics}, year = 2022, } @inproceedings{CTT100882140, author = {Julian Sasaki and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai}, title = {Highly Efficient Spin Current Source Using BiSb Topological Insulator / NiO Bilayers}, booktitle = {}, year = 2022, } @inproceedings{CTT100879801, author = {H. H. Huy and J. Sasaki and N. H. D. Khang and S. Namba and P. N. Hai and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and R. Nagabhirava and M. Ho and H. Takano}, title = {Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application}, booktitle = {}, year = 2022, } @inproceedings{CTT100879830, author = {B. York and P. Hai and Q. Le and C. Hwang and S. Okamura and M. Gribelyuk and X. Xu and K. Nguyen and H. Ho and J. Sasaki and X. Liu and S. Le and M. Ho and H. Takano}, title = {High Spin Hall Angle doped Topological Insulators BiSbX using novel high resistive growth and migration barrier layers}, booktitle = {}, year = 2022, }