@article{CTT100772146,
  author = {J. Yaita and T.Suto and M. Natal and S. E. Saddow and M. Hatano and T. Iwasaki},
  title = {In-situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates},
  journal = {Diamond & Related Materials},
  year = 2018,
}

@article{CTT100768239,
  author = {J. Yaita and T. Tsuji and M. Hatano and T. Iwasaki},
  title = {Preferentially-aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on si substrates via 3C-SiC intermediate layers},
  journal = {Appl. Phys. Express},
  year = 2018,
}

@inproceedings{CTT100768821,
  author = {星野 晴華 and 矢板 潤也 and 岩崎 孝之 and 波多野 睦子},
  title = {ヘテロエピタキシャル核形成プロセスにおけるバイアス 電流のモニタリング},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768822,
  author = {室岡 拓也 and 矢板 潤也 and 岩崎 孝之 and 牧野 俊晴 and 小 倉 政彦 and 加藤 宙光 and Natal Meralys and Saddow Stephen E. and 山崎 聡 and 波多野 睦子},
  title = {3C-SiC/Si 基板上に形成したヘテロエピタキシャルダイ ヤモンドSBD の電気特性},
  booktitle = {},
  year = 2018,
}

@misc{CTT100843828,
  author = {Junya Yaita and Takayuki Iwasaki and Mutsuko Hatano},
  title = {Heteroepitaxy of diamond on SiC},
  year = 2018,
}

@misc{CTT100759787,
  author = {Junya Yaita},
  title = {Study of diamond heteroepitaxy on Si substrates for power and sensor devices},
  year = 2018,
}

@misc{CTT100800554,
  author = {Junya Yaita},
  title = {Study of diamond heteroepitaxy on Si substrates for power and sensor devices},
  year = 2018,
}

@misc{CTT100759821,
  author = {Junya Yaita},
  title = {Study of diamond heteroepitaxy on Si substrates for power and sensor devices},
  year = 2018,
}



@phdthesis{CTT100759787,
  author = {Junya Yaita},
  title = {Study of diamond heteroepitaxy on Si substrates for power and sensor devices},
  school = {東京工業大学},
  year = 2018,
}

@phdthesis{CTT100800554,
  author = {Junya Yaita},
  title = {Study of diamond heteroepitaxy on Si substrates for power and sensor devices},
  school = {東京工業大学},
  year = 2018,
}

@phdthesis{CTT100759821,
  author = {Junya Yaita},
  title = {Study of diamond heteroepitaxy on Si substrates for power and sensor devices},
  school = {東京工業大学},
  year = 2018,
}