@article{CTT100782443,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100795209,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi and N. Ikarashi},
  title = {Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing},
  journal = {Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100780938,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing},
  journal = {JPN J APPL PHYS},
  year = 2018,
}

@article{CTT100780935,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Investigation on Mo1-xWxS2 Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C4H9)2S2},
  journal = {JPN J APPL PHYS},
  year = 2018,
}

@article{CTT100780937,
  author = {N. Hayakawa and Iriya Muneta and Takumi Ohashi and Kenntarou Matsuura and Junnichi Shimizu and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Hitoshi Wakabayashi},
  title = {Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control},
  journal = {Japan Journal of Applied Physics},
  year = 2018,
}

@article{CTT100780936,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization},
  journal = {Journal of Electrical Materials},
  year = 2018,
}

@inproceedings{CTT100842523,
  author = {S. Ishihara and Y. Hibino and Y. Oyanagi and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Stimulating Raman Spectra of Sputtering Deposited Polycrystalline MoS2 Films by Phonon Confinement Model},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100842524,
  author = {Y. Oyanagi and Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Fabrication of WS2 Film by DC Bias Applied High-Temperature Sputtering},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795212,
  author = {M. Hamada and K. Matsuura and T. Sakamoto and H. Tanigawa and T. Ohashi and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795211,
  author = {T. Sakamoto and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and Y. Suzuki and N. Ikarashi and H. Wakabayashi},
  title = {Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780958,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Centimeter-scale high-performance few-layer MoS2 fabricated by RF magnetron sputtering and subsequent post-deposition annealing},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816744,
  author = {松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 大橋 匠 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816740,
  author = {五十嵐 智 and 松浦 賢太朗 and 濱田 昌也 and 谷川 晴紀 and 坂本 拓朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816742,
  author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780955,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Low-temperature solid-phase crystallization of sputtering deposited quasi-layered MoS2 thin film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100842522,
  author = {Y. Hibino and S. Ishihara and Y. Oyanagi and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias},
  booktitle = {ECS Transactions},
  year = 2018,
}

@inproceedings{CTT100780957,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100818000,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate},
  booktitle = {2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings},
  year = 2018,
}

@inproceedings{CTT100904005,
  author = {坂本 拓朗 and 大橋 匠 and 松浦 賢太朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904004,
  author = {大橋 匠 and 坂本 拓朗 and 松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 石原 聖也 and 日比野 祐介 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {Migration制御したスパッタリング法による2次元層状MoS2成膜},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780959,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Investigation of MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition},
  booktitle = {},
  year = 2018,
}