@article{CTT100640880,
  author = {Y. Takamura and K. Hayashi and Y. Shuto and R. Nakane and S. Sugahara},
  title = {Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors},
  journal = {J. Electron. Mater.},
  year = 2012,
}

@article{CTT100640883,
  author = {Y. Takamura and S. Sugahara},
  title = {Analysis and control of the Hanle effect in metal–oxide–semiconductor inversion channels},
  journal = {J. Appl. Phys.},
  year = 2012,
}

@article{CTT100640885,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Evaluation and control of break-even time of nonvolatile SRAM based on spin-transistor architecture with spin-transfer-torque MTJs},
  journal = {J. Appl. Phys.},
  year = 2012,
}

@inproceedings{CTT100640866,
  author = {S. Sugahara and Y. Shuto and S. Yamamoto},
  title = {Energy-efficient nonvolatile logic systems based on CMOS/spintronics hybrid technology},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640868,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {スピントロニクス/CMOS融合技術:スピントランジスタ・アーキテクチャ},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100658809,
  author = {髙村 陽太 and 菅原 聡},
  title = {スピンMOSFETにおけるHanle効果の解析(2)},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640959,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM:スリープモード動作とその応用},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640960,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性DFF：BETにおける静的リーク電流の影響},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640962,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFET技術を用いたFPGAの不揮発性パワーゲーティング},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640963,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAMのスタティックノイズマージンとエネルギー性能の解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640869,
  author = {菅原 聡 and 周藤 悠介 and 山本 修一郎},
  title = {スピントロニクス/CMOS融合技術: スピン機能MOSFETとその低消費電力ロジック応用},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640901,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640902,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Static noise margin and power-gating efficiency of a new nonvolatile SRAM cell based on pseudo-spin-transistor architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640965,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM:スタティックノイズマージン評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640870,
  author = {菅原聡},
  title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
  booktitle = {},
  year = 2012,
}