@book{CTT100589431,
  author = {Hei Wong and Kenji Shiraishi and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {High-K Gate Dielectrics},
  publisher = {Pan Stanford Publishing Pte. Ltd.},
  year = 2009,
}

@article{CTT100588550,
  author = {S.-L. Siu and H. Wong and W.-S. Tam and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors},
  journal = {Microelectronics Reliability},
  year = 2009,
}

@article{CTT100600446,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and Jaeyeol Song and Soshi Sato and Hiroshi Nohira and E. Ikenaga and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2009,
}

@article{CTT100586778,
  author = {B Sen and H Wong and B.L. Yang and P.K. Chu and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation},
  journal = {Solid-State Electronics},
  year = 2009,
}

@article{CTT100588545,
  author = {Tomotsune Koyanagi and Kiichi Tachi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@inproceedings{CTT100597758,
  author = {Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Overwhelming the o.5 nm EOT Level for CMOS Gate Dielectric},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598280,
  author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Ramgopal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Short-channel effects on FinFETs induced by inappropriate fin widths},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598275,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598273,
  author = {Katuya Matano and Kuniyuki KAKUSHIMA and Ahmet Parhat and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Threshold Voltage Control in p-MOSFET with High-k Gate dielectric},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598270,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597929,
  author = {Kiyohisa Funamizu and Takashi Kanda and Y.C.Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597926,
  author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597925,
  author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597923,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597922,
  author = {Miyuki Kouda and Naoto Umezawa and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and Kenji Shiraishi and 知京豊裕 and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597921,
  author = {A.Abudukelimu and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597917,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597913,
  author = {Soshi Sato and Hideaki Arai and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Evaluation of Channel Potential Profile of Si Nanowire Field Effect Transistor},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597907,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597900,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597891,
  author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597860,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597775,
  author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597770,
  author = {Hiroshi Nohira and Yoichiro Kon and Koji Kitamura and Miyuki Kouda and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx / LaOx/Si and LaOx/CeOx /Si Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597769,
  author = {Kiyohisa Funamizu and Y.C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and E.Y. Chang and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597766,
  author = {M.K.Bera and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597764,
  author = {Tomotsune Koyanagi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and AKIRA NISHIYAMA and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597761,
  author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597754,
  author = {Soshi Sato and Hideyuki Kamimura and Hideaki Arai and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and Keisaku Yamada and HIROSHI IWAI},
  title = {High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597756,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Kiichi Tachi and Miyuki Kouda and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597760,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585316,
  author = {船水清永 and Yueh-Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and Edward Yi Chang and 服部健雄 and 岩井洋},
  title = {High-k ゲート絶縁膜を用いたInxGa1-xAs MOS構造の研究},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586592,
  author = {Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {High-k expariment below 0.4 nm EOT},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100586499,
  author = {Takamasa Kawanago and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET},
  booktitle = {INFOS2009},
  year = 2009,
}

@inproceedings{CTT100586498,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Post metallization annealing study in La2O3/Ge MOS structure},
  booktitle = {INFOS2009},
  year = 2009,
}

@inproceedings{CTT100585083,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Naoto Umezawa and Ahmet Parhat and Kenji Shiraishi and Toyohiro Chikyow and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {2009 Symposium on VLSI Technology Digest of Technical Papers},
  year = 2009,
}

@inproceedings{CTT100586589,
  author = {Takahiro Nagata and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 知京豊裕 and HIROSHI IWAI},
  title = {On the thermal stability of nicket silicides},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585445,
  author = {小林勇介 and 角嶋邦之 and パールハットアヘメト and V.R. Rao and 筒井一生 and 岩井洋},
  title = {FinFETの構造ばらつきによるオン電流のばらつきの検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585442,
  author = {星野憲文 and 中川恭成 and 野平博司 and 室 隆桂之 and 加藤 有香子 and 甲斐隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 木下 豊彦 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {光電子分光によるSi中Asの化学結合状態評価},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585433,
  author = {中山寛人 and 日野雅文 and 永田晃基 and 小瀬村大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋厚志 and 服部健雄 and 岩井洋},
  title = {As注入とSiN応力膜によるpoly-Siへの歪記憶の検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585430,
  author = {又野克哉 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Ge層挿入によるLa2O3-MOSキャパシタのVFB制御},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585426,
  author = {新井英朗 and 上村英之 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成の評価},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585423,
  author = {佐藤創志 and 上村英之 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 筒井一生 and 杉井信之 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585317,
  author = {李映勲 and 永田貴弘 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {引っ張り歪みSiナノワイヤの電子構造とバリスティック伝導},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585306,
  author = {宋在烈 and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585302,
  author = {岩井洋 and 名取研二 and 白石賢二 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト},
  title = {シリコンナノワイヤFET研究の現状とロードマップ作成の考え方},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585291,
  author = {岩井洋 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト and 佐藤創志 and 上村英之 and 新井英朗},
  title = {トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586581,
  author = {小柳友常 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {La2O3MOSデバイスへのSrO導入による電気特性の変化},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586495,
  author = {Hideyuki Kamimura and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact},
  booktitle = {ISTC /CSTIC2009},
  year = 2009,
}

@inproceedings{CTT100586472,
  author = {Hiroki Fujisawa and A Srivastava and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
  title = {Electrical Characterization of W/HfO2 MOSFETs with La2O3 Incorporation},
  booktitle = {ISTC /CSTIC2009},
  year = 2009,
}

@inproceedings{CTT100585303,
  author = {野平博司 and 今陽一郎 and 北村幸司 and 幸田みゆき and 角嶋邦之 and 岩井 洋},
  title = {CeO2 /La2O3/Si(100)構造の熱安定性(2)},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585313,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585312,
  author = {細田亘 and 野口浩平 and パールハットアヘメト and 角嶋邦之 and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用},
  booktitle = {第56回応用物理学会予稿集},
  year = 2009,
}

@inproceedings{CTT100585128,
  author = {幸田みゆき and 梅澤直人 and 角嶋邦之 and パールハットアヘメト and 白石賢二 and 知京豊裕 and 山田啓作 and 岩井洋 and 服部健雄},
  title = {低電子揺動Ce酸化物を利用したhigh－k膜中の固定電荷の抑制},
  booktitle = {ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）},
  year = 2009,
}

@inproceedings{CTT100830567,
  author = {H. Nakayama and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation},
  booktitle = {},
  year = 2009,
}