@article{CTT100614619,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of rare earth silicates for highly scaled gate dielectrics},
  journal = {Microelectronic Engineering},
  year = 2010,
}

@article{CTT100613524,
  author = {Hiroshi Shimomura and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Equivalent Noise Temperature Representation for Scaled MOSFETs},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 2010,
}

@article{CTT100607472,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and M.Adachi and Koichi Okamoto and Soshi Sato and Jaeyeol Song and Takamasa Kawanago and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of La-silicate for direct contact of high-k with silicon},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100607473,
  author = {Yeonghun Lee and KENJI NATORI and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Kenji Shiraishi},
  title = {Size-Dependent Properties of Ballistic Silicon Nanowire Field Effect Transistors},
  journal = {Journal of Applied Physics},
  year = 2010,
}

@article{CTT100607582,
  author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = 2010,
}

@article{CTT100613519,
  author = {M.K.Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = 2010,
}

@article{CTT100605118,
  author = {Hiroshi Shimomura and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 2010,
}

@article{CTT100604479,
  author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Rampogal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100604483,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100607466,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and Kiichi Tachi and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100607464,
  author = {Kuniyuki KAKUSHIMA and M. Nakagawa and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric},
  journal = {Semiconductor Science and Technology},
  year = 2010,
}

@article{CTT100597748,
  author = {H. Wong and HIROSHI IWAI and Kuniyuki KAKUSHIMA and B.L. Yang and P.K. Chu},
  title = {XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation},
  journal = {Journal of Electrochemical Society},
  year = 2010,
}

@article{CTT100613522,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1, ????,2010},
  year = 2010,
}

@article{CTT100608503,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1},
  year = 2010,
}

@inproceedings{CTT100617607,
  author = {T. Nakayama and Kuniyuki KAKUSHIMA and O. Nakatsuka and Y. Machida and S. Sotome and T. Matsuki and Kenji Ohmori and HIROSHI IWAI and S. Zaima and 知京豊裕 and Kenji Shiraishi and Keisaku Yamada},
  title = {Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615530,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615536,
  author = {Ahmet Parhat and 来山大祐 and 金田 翼 and 鈴木  拓也 and Tomotsune Koyanagi and Miyuki Kouda and M. Mamatrishat and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Scaling of EOT Beyond 0.5nm},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615539,
  author = {Kenji Ozawa and Miyuki Kouda and Y. Urabe and T. Yasuda and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {La2O3  insulators prepared by ALD using La(iPrCp)3 source: self-limiting growth conditions and electrical properties},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615527,
  author = {KAZUO TSUTSUI and Masaoki Tanaka and Norifumi Hoshino and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and T. Muro and T. Kinoshita and takeo hattori and HIROSHI IWAI},
  title = {Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100830564,
  author = {D. Kitayama and T. Koyanagi and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613726,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3  Gated MOS Device},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613728,
  author = {M.Bera and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613731,
  author = {M. Mamatrishat and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and A. Aierken and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613732,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613733,
  author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613735,
  author = {Y. Wu and Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616065,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックナノワイヤトランジスタ性能の太さ依存における状態密度と静電容量のトレードオフ},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613533,
  author = {Soshi Sato and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616049,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616073,
  author = {山下 晃司 and 角嶋邦之 and 岩井洋},
  title = {HfO2/La2O３/In0.53Ga0.47As構造の熱安定性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616070,
  author = {中島 一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {チャージポンピング法による立体Si構造の界面準位密度の評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616068,
  author = {小山 将央 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616048,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部 友二 and 安田 哲二},
  title = {CVD法によるCeOx絶縁膜の作製と特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613532,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616050,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616054,
  author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616055,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616058,
  author = {竇 春萌 and マイマイティ  マイマイティレャアティ and ダリューシュザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616060,
  author = {田中正興 and 金原潤 and 宮田陽平 and 角嶋邦之 and パールハットアヘメト and 室隆桂之 and 木下豊彦 and 野平博司 and 筒井一生 and 室田 淳一 and 服部健雄 and 岩井洋},
  title = {Siエピタキシャル層にドープされたボロンの軟X線光電子分光},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616061,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616062,
  author = {鈴木 拓也 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616063,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100608701,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討},
  booktitle = {電子情報通信学会技術研究報告 pp.17-22},
  year = 2010,
}

@inproceedings{CTT100608700,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討},
  booktitle = {電子情報通信学会技術研究報告 pp.43-48},
  year = 2010,
}

@inproceedings{CTT100608715,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 名取研二 and 岩井洋 and 山田啓作},
  title = {キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析},
  booktitle = {電子情報通信学会技術研究報告 pp.11-16},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605137,
  author = {KAZUO TSUTSUI and Norifumi Hoshino and Yasumasa Nakagawa and Masaoki Tanaka and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
  title = {Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605146,
  author = {Ahmet Parhat and Wataru Hosoda and unknown unknown and Yoshihisa Ohishi and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100604217,
  author = {Ahmet Parhat and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon-},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603770,
  author = {佐藤創志 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利 健治 and 名取研二 and 岩井洋 and 山田啓作},
  title = {Siナノワイヤトランジスタの電気特性の断面形状依存症},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100605147,
  author = {Ahmet Parhat and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603766,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸素添加がWゲートMOSデバイスの電気特性に与える影響},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603743,
  author = {Katuya Matano and Kiyohisa Funamizu and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603744,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603745,
  author = {AbudukelimuAbudureheman and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and HIROSHI IWAI and takeo hattori and KENJI NATORI},
  title = {Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603756,
  author = {来山 大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603758,
  author = {ダリューシュ ザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603759,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSFETへのCeOxキャップによる電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603760,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物をキャップすることによるMOSFETの電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603761,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603765,
  author = {神田高志 and 船水清永 and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603767,
  author = {田中正興 and 星野憲文 and 筒井一生 and 野平博司 and 室隆桂之 and 加藤有香子 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
  title = {光電子分光により検出したSi中のAsおよびPの化学結合状態の評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603768,
  author = {茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜中のSiナノワイヤへのNi拡散の制御},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603771,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックSiナノワイヤトランジスタの電気特性の直径依存性},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100630817,
  author = {山下晃司 and 野平博司 and 角嶋邦之 and 岩井洋},
  title = {HfO2/La2O３/In0.53Ga0.47As構造の熱安定性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630954,
  author = {舘喜一 and 角嶋邦之 and T. Ernst and S. Cristoloveanu and 岩井洋},
  title = {Vertically-Stacked Nanowire Transistors for future CMOS},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630955,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健治 and 山田啓作 and 名取研二 and 岩井洋},
  title = {Influence of the cross-sectional shape for Si nanowire FETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630956,
  author = {李映勲 and 角嶋邦之 and 名取研二 and 岩井洋},
  title = {Diameter-dependent injection velocity of ballistic Si nanowire MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630957,
  author = {AbudukelimuAbudureheman and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {The Effect of Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630958,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630960,
  author = {小山将央 and 茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Lateral encroachment of Ni silicide into Si nanowire},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630961,
  author = {中島一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Interface state density of 3-D structured Si using charge pumping method},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630990,
  author = {川那子高暢 and 鈴木 拓也 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630991,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630992,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Effect of Rare Earth Oxide Capping for La-based Gate Oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630993,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {Remote Coulomb and roughness scatterings in gate oxide scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630995,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630997,
  author = {久保田透 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Spectroscopic analysis of interface state density in high-k/Si structure},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630998,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Electrical characterization of CVD deposited Ce oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631000,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Self-limited growth of La oxides with ALD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631002,
  author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631005,
  author = {竇春萌 and 向井弘樹 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Feasibility study of Ce oxide for resistive RAM application},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631006,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@misc{CTT100633265,
  author = {角嶋邦之 and 岩井洋 and アヘメト パールハット and 佐藤　創志 and 山田　啓作 and 大毛利　健治},
  title = {ナノワイヤトランジスタ及びその製造方法},
  howpublished = {公開特許},
  year = 2011,
  month  = {},
  note   = {特願2010-079971(2010/03/31), 特開2011-211126(2011/10/20)}
}


@misc{CTT100633283,
  author = {角嶋邦之 and 岩井洋 and アヘメト パールハット and 佐藤　創志 and 山田　啓作 and 大毛利　健治},
  title = {ナノワイヤトランジスタ及びその製造方法},
  howpublished = {公開特許},
  year = 2011,
  month  = {},
  note   = {特願2010-079972(2010/03/31), 特開2011-211127(2011/10/20)}
}