@article{CTT100647718,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and 安田哲二},
  title = {Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647720,
  author = {H Wong and B.L. Yang and S. Dong and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Current conduction and stability of CeO2/La2O3 stacked gate dielectric},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}

@article{CTT100709491,
  author = {Tadashi Ishida and Kuniyuki KAKUSHIMA and Teruyasu Mizoguchi and Hiroyuki Fujita},
  title = {Role of dislocation movement in the electrical conductance of nanocontacts},
  journal = {Scientific Reports},
  year = 2012,
}

@article{CTT100647712,
  author = {B.L. Yang and H Wong and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Improving the electrical characteristics of MOS transistors with CeO2/ La2O3 stacked gate dielectric},
  journal = {Microelectronics Realiability},
  year = 2012,
}

@article{CTT100647654,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647714,
  author = {S.-L. Siu and W.-S. Tam and H Wong and C.-W. Kok and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors},
  journal = {Microelectronics Realiability},
  year = 2012,
}

@article{CTT100647652,
  author = {マイマイティ マイマイティレャアティ and 久保田透 and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡好則 and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647651,
  author = {unknown unknown and W. Yasenjiang and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and Kenji Natori and HIROSHI IWAI},
  title = {Influence of strained drain on performance of ballistic channel devices},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647649,
  author = {C. Dou and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647591,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647648,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Natori and HIROSHI IWAI},
  title = {Gate Capacitance Modeling and Diamater-Drpendent Performance of Nanowire MOSFETs},
  journal = {IEEE Transactions on Electron Deviices},
  year = 2012,
}

@article{CTT100647650,
  author = {W. Feng and R. Hettiarachchi and Soshi Sato and Kuniyuki KAKUSHIMA and M. Niwa and HIROSHI IWAI and Keisaku Yamada and Kenji Ohmori},
  title = {Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647590,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647588,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2012,
}

@article{CTT100647576,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647574,
  author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647577,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Effects of aluminum doping on lanthanum oxide gate dielectric films},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647587,
  author = {H.D. Trinh and Yueh-Chin Lin and H.C. Wang and C.H. Chang and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Takamasa Kawanago and Y.G. Lin and C.M. Chen and Y.Y.Wong and G.N. Huang and M. Hudait and E.Y. Chang},
  title = {Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors},
  journal = {Applied Physics Express},
  year = 2012,
}

@article{CTT100647573,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature},
  journal = {IEEE Transactions on Electron Devices},
  year = 2012,
}

@article{CTT100647716,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647717,
  author = {Miranda Enrique and shinichi kano and C. Dou and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}

@inproceedings{CTT100830503,
  author = {T. Kamale and R. Tan and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830496,
  author = {Y. Tanaka and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and S. Yamasaki and H. Iwai},
  title = {TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori1 and Hiroshi Iwai},
  title = {Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830553,
  author = {S. Kano and C. Dou and M. Hadi and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and E. Miranda and T. Hattori and H. Iwai},
  title = {Influence of Electrode Material for CaOx Based Resistive Switching},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657217,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657218,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657247,
  author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657248,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657249,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657252,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657348,
  author = {Kuniyuki KAKUSHIMA and Yuya Suzuki and ダリューシュザデ and Takamasa Kawanago and HIROSHI IWAI},
  title = {Development of Core Technologies for Green Nanoelectronics},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657357,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657454,
  author = {Wei Li and 中島一裕 and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657534,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657535,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657536,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657538,
  author = {Miranda Enrique and shinichi kano and 竇春萌 and J. Sune and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {New experimental evidences of conductance quantization in electroformed oxide stacks},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Y. Izumi and T. Muro and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657559,
  author = {櫻井蓉子 and 大毛利健治 and Keisaku Yamada and Kuniyuki KAKUSHIMA and T. Tayagaki and HIROSHI IWAI and Y. Kanemitsu and K. Asakawa and Kenji Shiraishi and S. Nomura},
  title = {Photoluminescence Properties of Si Nanolayers and Si Nanowires},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657561,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657562,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657583,
  author = {Kuniyuki KAKUSHIMA and Yuta Tamura and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657633,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657638,
  author = {Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657639,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657642,
  author = {Tohtarhan Kamal and R. Tan and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657951,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100658060,
  author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100658065,
  author = {E. Mranda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  booktitle = {[588]	E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”,  ESREF2012, October, 2012, Cagliari, Italy},
  year = 2012,
}

@inproceedings{CTT100830546,
  author = {T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657950,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657186,
  author = {Kuniyuki KAKUSHIMA and Jun Kanehara and takeo hattori and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Boron depth profile of a plasma immersed substrate by XPS analysis},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657187,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657188,
  author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657189,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Influence of Heat Generation within Drain Region on Transport of Hot Electrons},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657190,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657191,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI},
  title = {Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657192,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Natori and HIROSHI IWAI},
  title = {Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657193,
  author = {DARYOUSH ZADEH and Ryuji Hosoi and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization and improvement of high-k/InGaAs devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657195,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657196,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657197,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {An analytical model of a tunnel FET with Schottky junction},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657198,
  author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657205,
  author = {K. Tuokedaerhan and Tasuku Kaneda and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of Annealing Ambient for La2O3/Si Capacitor},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657208,
  author = {Daisuke Kitayama and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657211,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657212,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657213,
  author = {鈴木 拓也 and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657214,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of metal electrode material on resistive swirching properties of Ce oxides},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657215,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657216,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst},
  booktitle = {},
  year = 2012,
}