@article{CTT100830371,
  author = {"Mokh Hadi" and "Shinichi Kano" and "Kuniyuki Kakushima" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer},
  journal = {Semiconductor Science and Technology},
  year = 2014,
}

@article{CTT100830372,
  author = {"Yusuke Takei" and "Mari Okamoto" and "Wataru Saito" and "Kazuo Tsutsui" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  journal = {ECS Transactions},
  year = 2014,
}

@article{CTT100830384,
  author = {"Y. Wu" and "H. Hasegawa" and "K. Kakushima" and "K. Ohmori" and "T. Watanabe" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "Y. Kataoka" and "K. Natori" and "K. Yamada" and "H. Iwai"},
  title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830585,
  author = {"Chunmeng Dou" and "Tomoya Shoji" and "Kazuhiro Nakajima" and "Kuniyuki Kakushima" and "Parhat Ahmet" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830499,
  author = {"T. Kawanago" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT},
  journal = {IEEE Transaction on Electron Devices(T-ED)},
  year = 2014,
}

@article{CTT100830501,
  author = {"K. Tuokedaerhan" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain},
  journal = {Applied Physics Letters (APL)},
  year = 2014,
}

@inproceedings{CTT100830262,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and K. Natori and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100676725,
  author = {N. Nishizawa and T. Kawanago and K. Kakushima and H. Munekata},
  title = {Formation of Ultra-thin, Crystalline AlOx Tunnel Barrier on GaAs and Vice Versa},
  booktitle = {Abstracts},
  year = 2014,
}

@inproceedings{CTT100830263,
  author = {T. Shoji and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830265,
  author = {Kazuo Tsutsui and Masayuki Kamiya and Yusuke Takei and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Yoshinori Kataoka and Hiroshi Iwai},
  title = {Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830266,
  author = {Y. Takei and M. Okamoto and W. Saito and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y. Kataoka and H. Iwai},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830277,
  author = {T. Ohashi and H. Wakabayashi and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830473,
  author = {Y. Ito and H. Hori and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y.Kataoka and A.Nishiyama and N. Sugii and K. Natori and H. Iwai},
  title = {Proposal of junction formation process for solar cells made of silicon microstructures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830474,
  author = {M. Kamiya and Y. Takei and W. Saito and K. Kakushima and H. Wakabayashi and Y. Kataoka and K. Tsutsui and H. Iwai},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830478,
  author = {T. Kato and T.Inamura and A.Sasaki and K.Aoki and K.Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Thickness-dependent electrical characterization of β‐FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830479,
  author = {Minjae Yoon and K. Terayama and A. Nakajima and S. Nichizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830480,
  author = {M. Motoki and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830481,
  author = {H. Hasegawa and Y.Wu and J.Song and K. Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830483,
  author = {Y. Nakamura and K. Kakushima and Y. Kataoka and A. Nishiyama and H. Wakabayashi and N. Sugii and K. Tsutsui and K. Natori and H. Iwai},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830484,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830485,
  author = {Chunmeng Dou and Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830471,
  author = {K. Terayama and A. Nakajima and S. Nishizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672974,
  author = {Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673055,
  author = {劉 璞誠 and 中島 昭 and Kuniyuki KAKUSHIMA and T. Makino and M. Ogura and 西澤伸一 and HIROSHI IWAI and 大橋弘通},
  title = {A study on mobility of 2D hole gas in AlGaN/GaN heterostructure with piezo- and spontaneous polarizationn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673093,
  author = {雷 一鳴 and Shu Munekiyo and Kuniyuki KAKUSHIMA and Takamasa Kawanago and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and M. Furuhashi and N. Miura and S. Yamakawa},
  title = {Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673095,
  author = {Takafumi Katou and Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristic of b-FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673145,
  author = {Yoshihiro Matsukawa and Mari Okamoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673148,
  author = {Yusuke Takei and Mari Okamoto and S. Man and Ryosuke Kayanuma and Masayuki Kamiya and 齋藤渉 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Contact resistances depending on AlGaN layer thickness  for AlGaN/GaN HEMT structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673149,
  author = {Masayuki Kamiya and Yusuke Takei and 齋藤渉 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673180,
  author = {Yuuma Itou and Hayato Hori and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Schottky barrier height reduction process for silicide/Si interfaces},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673181,
  author = {Hiroaki Yonezawa and Rei Kayanuma and 中島 昭 and 西澤伸一 and 大橋弘通 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {AlGaN/GaN-based p-channel HFETs with wide-operating temperature},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673182,
  author = {Kazuma Terayama and 中島 昭 and 西澤伸一 and 大橋弘通 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Caluculation of ultimate on-resistance in GaN lateral HFETs  using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673186,
  author = {Sin Man and Rei Kayanuma and Yusuke Takei and T. Takahashi and M. Shimizu and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {A Study on the Fabrication of GaN-FinFET Using  Selective Area Growth Method},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673188,
  author = {Hayato Hori and Yuuma Itou and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Effects of substrate back bias on solar cells formed on thin SOI structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673189,
  author = {Takumi Ohashi and Hitoshi Wakabayashi and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and Akira Nishiyama and Yoshinori Kataoka and Kenji Natori and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673190,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673377,
  author = {中島 昭 and Hiroaki Yonezawa and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and 西澤伸一 and 大橋弘通 and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673379,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 岩井洋},
  title = {Highly Scalable La2O３/InGaAs Gate Stack with Low Interface State Density},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673380,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 岩井洋},
  title = {La2O３ gate dielectrics for InGaAs channel using ALD process},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673381,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {立体Si構造における局所的な界面準位密度の抽出},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673418,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673460,
  author = {Tuokedaerhan Kamale and Shuhei Hosoda and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {W2Cゲート電極によるLa-silicate MOSFETの移動度改善},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673462,
  author = {呉研 and 長谷川明紀 and 角嶋邦之 and 渡辺  孝信 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673463,
  author = {陳江寧 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673464,
  author = {LiWei and 佐々木亮人 and 大図 秀行 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {単斜晶WO3薄膜抵抗率の熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673466,
  author = {稲村太一 and 嘉藤貴史 and 佐々木亮人 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {β-FeSi2の抵抗率熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673467,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673468,
  author = {関拓也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673471,
  author = {細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673472,
  author = {吉原亮 and 元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673473,
  author = {今村浩章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673474,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 大橋弘通 and 岩井洋 and 齋藤渉},
  title = {TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673475,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Siナノワイヤー曲面における保護膜界面準位密度の研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673477,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673999,
  author = {元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674002,
  author = {譚錫昊 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674004,
  author = {劉 璞誠 and 竇春萌 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669170,
  author = {劉 璞誠 and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Characterization of Two-Dimensional Hole Gas at GaN/AlGaN Heterointerface},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674044,
  author = {Yoon Minjae and 寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674046,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674048,
  author = {佐々木亮人 and 青木克明 and 片岡好則 and 小林 薫平 and 稲村太一 and 角嶋邦之 and 岩井洋},
  title = {バリウムシリサイド半導体を用いたショットキー型太陽電池に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674049,
  author = {武井優典 and 岡本真里 and マンシン and 萱沼怜 and 神谷真行 and 齋藤渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674050,
  author = {堀隼人 and 伊藤勇磨 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {薄膜SOI太陽電池の発電特性への基板バイアス効果},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674051,
  author = {寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674052,
  author = {米澤宏昭 and 萱沼怜 and 中島 昭 and 西澤伸一 and 大橋弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674053,
  author = {伊藤勇磨 and 堀隼人 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {微細Si構造を利用した太陽電池に適した接合プロセスの提案},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674087,
  author = {神谷真行 and 武井優典 and 齋藤渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674681,
  author = {小路智也 and 伊藤勇磨 and 堀隼人 and 宮澤遼太 and 嘉藤貴史 and 角嶋邦之 and 若林整 and 筒井一生 and 片岡好則 and 岩井洋},
  title = {Surface States, Potential and Interface Control for Si Nanowire PV},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100780941,
  author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and Hitoshi Wakabayashi},
  title = {Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs},
  booktitle = {Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials},
  year = 2014,
}

@inproceedings{CTT100830267,
  author = {Akira Nakajima and Sin-ichi Nishizawa and Hiromichi Ohashi and Hiroaki Yonezawa and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674010,
  author = {雷 一鳴 and 宗清修 and 角嶋邦之 and 川那子高暢 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 古橋 壮之 and 三浦 成久 and 山川 聡},
  title = {ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669171,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669358,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672369,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672372,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672393,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672397,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Highly Scalable La2O3 /InGaAs Gate Stack with Low Interface State Density},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672405,
  author = {unknown unknown and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672409,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and HIROSHI IWAI},
  title = {Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672427,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode},
  booktitle = {K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan},
  year = 2014,
}

@inproceedings{CTT100672908,
  author = {wei li and 佐々木亮人 and 大図秀行 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672909,
  author = {Jiangning Chen and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and 齋藤渉},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672910,
  author = {Taichi Inamura and Takafumi Katou and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on silicide semiconductors for high efficiency thin film photovoltaic devices},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672961,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and Akira Nishiyama and Nobuyuki Sugii and 片岡好則 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Effect of pretreatment for high-/k//InGaAs interface property},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672963,
  author = {関拓也 and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672964,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672966,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Atomically flat interface of La-silicate/Si with W2C gate electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672967,
  author = {吉原亮 and Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Interface control process toward un-pinned metal/germanium Schottky contact},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672968,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672969,
  author = {Hiroaki Imamura and Taichi Inamura and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672971,
  author = {Tomoya Shoji and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672972,
  author = {Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Hitoshi Wakabayashi and Nobuyuki Sugii and HIROSHI IWAI},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672973,
  author = {Hiroki Hasegawa and Y. Wu and 宋 禛漢 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {The Workshop on Future Trend of Nanoelectronics:WIMNACT 39},
  booktitle = {},
  year = 2014,
}

@misc{CTT100710318,
  author = {角嶋邦之 and 川那子高暢 and 宗清修 and LEIYIMING and 古橋　壮之 and 三浦　成久},
  title = {半導体装置及びその製造方法},
  howpublished = {登録特許},
  year = 2018,
  month  = {},
  note   = {特願2014-173714(2014/08/28), 特開2016-048758(2016/04/07), 特許第6270667号(2018/01/12)}
}