@article{CTT100640880,
  author = {Y. Takamura and K. Hayashi and Y. Shuto and R. Nakane and S. Sugahara},
  title = {Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors},
  journal = {J. Electron. Mater.},
  year = 2012,
}

@article{CTT100640883,
  author = {Y. Takamura and S. Sugahara},
  title = {Analysis and control of the Hanle effect in metal–oxide–semiconductor inversion channels},
  journal = {J. Appl. Phys.},
  year = 2012,
}

@inproceedings{CTT100658809,
  author = {髙村 陽太 and 菅原 聡},
  title = {スピンMOSFETにおけるHanle効果の解析(2)},
  booktitle = {},
  year = 2012,
}

@misc{CTT100652653,
  author = {高村陽太},
  title = {ハーフメタル・フルホイスラー合金の形成とそのスピン機能MOSFETへの応用に関する研究},
  year = 2012,
}



@phdthesis{CTT100652653,
  author = {高村陽太},
  title = {ハーフメタル・フルホイスラー合金の形成とそのスピン機能MOSFETへの応用に関する研究},
  school = {東京工業大学},
  year = 2012,
}