@article{CTT100830612,
  author = {"K. Tuokedaerhan" and "R. Tan and K. Kakushima" and "P. Ahmet" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "T. Hattori" and "H. Iwai"},
  title = {Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application},
  journal = {Applied Physics Letters (APL)},
  year = 2013,
}

@inproceedings{CTT100801979,
  author = {若林整},
  title = {新版 ULSIデバイス・プロセス技術, 菅野卓雄(監修), 伊藤隆司(編著), 電子情報通信学会, 2013-05, A5判, 定価(本体5,600円+税)},
  booktitle = {電子情報通信学会誌},
  year = 2013,
}

@inproceedings{CTT100669354,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669355,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669173,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669174,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669175,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100830488,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki Kakushima and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kenji Natori and Hiroshi Iwai},
  title = {Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661660,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661663,
  author = {嘉藤貴史 and 稲村太一 and 佐々木 亮人 and 青木 克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661664,
  author = {劉 璞誠 and 米澤宏昭 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaNのドライエッチングへのBcl3の影響に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661665,
  author = {譚錫昊 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661678,
  author = {元木雅章 and 吉原亮 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661680,
  author = {宗清修 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661681,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658699,
  author = {Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Interface State Density of Passivation/Nanowire Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662337,
  author = {小路智也 and 石川昂 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662338,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662339,
  author = {今村浩章 and 稲村太一 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662340,
  author = {鹿国強 and 大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662341,
  author = {宋 禛漢 and 松本一輝 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Niシリサイドナノワイヤ抵抗率のNi膜厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100801225,
  author = {Hitoshi Wakabayashi},
  title = {Progress and prospects of silicon transistors based on junction technologies},
  booktitle = {Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013},
  year = 2013,
}

@inproceedings{CTT100662336,
  author = {中村嘉基 and 細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 若林整 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660879,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660886,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660888,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661649,
  author = {石川昂 and 小路智也 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた三次元Si構造の界面準位密度測定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661653,
  author = {米澤宏昭 and 中島  昭 and 西澤 伸一 and 大橋 弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {AlGaN/GaN系pチャンネルHFETの製作},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661655,
  author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661657,
  author = {神谷真行 and 寺山一真 and 武井優典 and 齋藤 渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661659,
  author = {大橋匠 and 若林整 and 角嶋邦之 and 杉井信之 and 西山彰 and 片岡好則 and 名取研二 and 筒井一生 and 岩井洋},
  title = {単層MoS2チャネルを用いたn-MOSFETの性能見積もり},
  booktitle = {},
  year = 2013,
}

@misc{CTT100801889,
  author = {若林整},
  title = {シリコントランジスタのあゆみと将来},
  year = 2013,
}

@misc{CTT100801474,
  author = {Hitoshi Wakabayashi and Schruefer, K.},
  title = {Foreword: Welcome to the 2013 symposium on VLSI technology},
  year = 2013,
}