@article{CTT100916300,
  author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and Yasuyuki Miyamoto},
  title = {Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100738795,
  author = {岩田 真次郎 and 大橋 一水 and 林 文博 and 福田 浩一 and 宮本 恭幸},
  title = {GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性},
  journal = {電気学会論文誌C},
  year = 2016,
}

@inproceedings{CTT100740962,
  author = {Y. Miyamoto and W. Lin and S.Iwata and K. Fukuda},
  title = {Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740893,
  author = {林 文博 and 岩田 真次郎 and 福田 浩一 and 宮本 恭幸},
  title = {短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与},
  booktitle = {},
  year = 2016,
}