@article{CTT100783282,
  author = {Kalainathan, S. and Ahsan, N. and Hoshii, T. and Okada, Y. and Logu, T. and Sethuraman, K. and Takuya Hoshii},
  title = {Tailoring sub-bandgap of CuGaS<inf>2</inf> thin film via chromium doping by facile chemical spray pyrolysis technique},
  journal = {Journal of Materials Science: Materials in Electronics},
  year = 2018,
}

@inproceedings{CTT100813969,
  author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto},
  title = {Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786671,
  author = {Takuya Hamada and Hayato Mukai and Tokio Takahashi and Toshihide Ide and Mitsuaki Shimizu and Hiroki Kuroiwa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Kazuo Tsutsui},
  title = {Electrical properties of selectively grown GaN channel for FinFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786672,
  author = {Takuya Hoshii and Shuma Tsuruta and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100880842,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Measurement for SiC Epitaxial Layer},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795212,
  author = {M. Hamada and K. Matsuura and T. Sakamoto and H. Tanigawa and T. Ohashi and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813966,
  author = {Toyohiko Kinoshita and Tomohiro Matsushita and Takayuki Muro and Takuo Ohkochi and Hitoshi Osawa and Kouichi Hayashi and Fumihiko Matsui and Kazuo Tsutsui and Kotaro Natori and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Aya Taked and Kensei Terashim and Wataru Hosoda and Tetsuji Fukura and Yuukou Yano and Hirohkazu Fujiwara and Masanori Sunagawa and Hiromitsu Kato and Tamio Oguchi and Takanori Wakita and Yuuji Muraoka and Takayoshi Yokoya},
  title = {Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816741,
  author = {向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816742,
  author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816743,
  author = {小川 達博 and 名取 鼓太郎 and 星井 拓也 and 仲武 昌史 and 渡辺 義夫 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786670,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816732,
  author = {久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816733,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816734,
  author = {清水 孝 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {TMAHによる表面処理のp型GaN/金属コンタクト特性への影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816735,
  author = {鶴田 脩真 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816736,
  author = {久永 真之佑 and 渡部 拓巳 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816737,
  author = {岩塚 春樹 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Siを導入したHfO2のMIMキャパシタの容量特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816738,
  author = {佐々 康平 and 久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {酸化セリウムを挿入したMIMキャパシタの充放電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816739,
  author = {佐々木 杏民 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813965,
  author = {Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Masahiro Watanabe and Naoyuki Shigyo and Takuya Saraya and Toshihiko Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Sinichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813968,
  author = {Kazuya Hisatsune and Yoshihisa Takaku and Kohei Sasa and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816731,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816730,
  author = {濱田拓也 and 向井勇人 and 高橋言緒 and 井手利英 and 清水三聡 and 星井拓也 and 角嶋邦之 and 若林整 and 岩井洋 and 筒井一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813959,
  author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
  title = {New methodology for evaluating minority carrier lifetime for process assessment},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813957,
  author = {C. Y. Su and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813958,
  author = {D. Saito and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Reliability of SiC Schottky Diodes with Mo2C Electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813956,
  author = {H. Kataoka and H. Iwai and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {A Defect Density Profile Extraction Method for GaN Epi-Wafers},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786669,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830068,
  author = {Suguru Tatsunokuchi and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and HIROSHI IWAI and K. Kakushima},
  title = {Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904002,
  author = {Chen-Yi Su and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100905144,
  author = {Su, C.Y. and Hoshii, T. and Muneta, I. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Interface state density of atomic layer deposited AI2O3 on J3-Gai03},
  booktitle = {ECS Transactions},
  year = 2018,
}

@inproceedings{CTT100783278,
  author = {Tsutsui, K. and Matsushita, T. and Muro, T. and Morikawa, Y. and Natori, K. and Hoshii, T. and Kakushima, K. and Wakabayashi, H. and Hayashi, K. and Matsui, F. and Kinoshita, T. and Takuya Hoshii},
  title = {Analyses of 3D atomic arrangements of impurity atoms doped in silicon by spectro-photoelectron holography technique},
  booktitle = {2018 18th International Workshop on Junction Technology, IWJT 2018},
  year = 2018,
}

@inproceedings{CTT100783279,
  author = {Kaneko, T. and Muneta, I. and Hoshii, T. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Characterization of β-Ga<inf>2</inf>O<inf>3</inf> Schottky barrier diodes},
  booktitle = {2018 18th International Workshop on Junction Technology, IWJT 2018},
  year = 2018,
}

@inproceedings{CTT100783280,
  author = {Su, C.Y. and Hoshii, T. and Muneta, I. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Interface state density of atomic layer deposited AI2O3 on J3-Gai03},
  booktitle = {ECS Transactions},
  year = 2018,
}

@inproceedings{CTT100783281,
  author = {Tatsunokuchi, S. and Muneta, I. and Hoshii, T. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Photovoltaic properties of lateral ultra-thin Si p-i-n structure},
  booktitle = {China Semiconductor Technology International Conference 2018, CSTIC 2018},
  year = 2018,
}

@inproceedings{CTT100783277,
  author = {Yamashita, D. and Watanabe, K. and Fujino, M. and Hoshii, T. and Okada, Y. and Nakano, Y. and Suga, T. and Sugiyama, M. and Takuya Hoshii},
  title = {Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs},
  booktitle = {2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017},
  year = 2018,
}