@article{CTT100896543,
  author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung-Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2022,
}

@article{CTT100875615,
  author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
  title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100855454,
  author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo},
  title = {Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2020,
}

@article{CTT100741717,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Control of threshold voltage by gate metal electrode in molybdenum disulfide fieldeffect},
  journal = {Applied Physics Letters},
  year = 2017,
}

@article{CTT100700939,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum},
  journal = {Applied Physics Letters},
  year = 2016,
}

@article{CTT100711249,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors},
  journal = {Applied Physics Letters},
  year = 2016,
}

@article{CTT100830094,
  author = {"J. Chen" and "T. Kawanago" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "D. Nohata" and "H. Nohira" and "K. Kakushima"},
  title = {La2O3 gate dielectrics for AlGaN/GaN HEMT},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100830499,
  author = {"T. Kawanago" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT},
  journal = {IEEE Transaction on Electron Devices(T-ED)},
  year = 2014,
}

@article{CTT100658744,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J.Sune and HIROSHI IWAI},
  title = {Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown},
  journal = {[Microelectronic Engineering},
  year = 2013,
}

@article{CTT100658805,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and Kenji Natori and HIROSHI IWAI},
  title = {Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100658807,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2013,
}

@article{CTT100647654,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647590,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647588,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2012,
}

@article{CTT100647587,
  author = {H.D. Trinh and Yueh-Chin Lin and H.C. Wang and C.H. Chang and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Takamasa Kawanago and Y.G. Lin and C.M. Chen and Y.Y.Wong and G.N. Huang and M. Hudait and E.Y. Chang},
  title = {Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors},
  journal = {Applied Physics Express},
  year = 2012,
}

@article{CTT100647574,
  author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647573,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature},
  journal = {IEEE Transactions on Electron Devices},
  year = 2012,
}

@article{CTT100647716,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647426,
  author = {Miyuki Kouda and Takamasa Kawanago and Ahmet Parhat and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices},
  journal = {Journal of Vacuum Science and Technology B},
  year = 2011,
}

@article{CTT100614619,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of rare earth silicates for highly scaled gate dielectrics},
  journal = {Microelectronic Engineering},
  year = 2010,
}

@article{CTT100607472,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and M.Adachi and Koichi Okamoto and Soshi Sato and Jaeyeol Song and Takamasa Kawanago and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of La-silicate for direct contact of high-k with silicon},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100604483,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100586862,
  author = {Y.C. Ong and D.S. Ang and K.L. Pey and S.J. O'Shea and K.E.J. Goh and C. Troadec and C.H. Thung and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Bilayer gate dielectric study by scanning tunneling microscopy},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2007,
}

@article{CTT100586853,
  author = {Takamasa Kawanago and Kiichi Tachi and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@inproceedings{CTT100902988,
  author = {Ryosuke Kajikawa and Takamasa Kawanago and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903419,
  author = {今井 慎也 and 梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903417,
  author = {寺岡 楓 and 今井 慎也 and 黒原 啓太 and 伊東 壮真 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 若林 整},
  title = {Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903418,
  author = {梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896541,
  author = {Ryo Ono and Shinya Imai and Takamasa Kawanago and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896555,
  author = {Peilong Wang and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896546,
  author = {水谷 一翔 and 星井 拓也 and 川那子 高暢 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896549,
  author = {川那子 高暢 and 梶川 亮介 and 水谷 一翔 and Tsai Sung Lin and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100843508,
  author = {Takahiro Matsuzaki and Takamasa Kawanago and SHUNRI ODA},
  title = {Impact of Contact Doping on Electrical Characteristics in WSe2 FET},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829205,
  author = {松浦 賢太朗 and 濱田 昌也 and 濱田 拓也 and 谷川 晴紀 and 坂本 拓朗 and 堀 敦 and 宗田 伊理也 and 川那子 高暢 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822658,
  author = {松﨑貴広 and 大場智昭 and 川那子高暢 and 小田俊理},
  title = {PVAによるMoS2FETへのキャリアドーピングと電気特性への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813978,
  author = {K. Matsuura and M. Hamada and T. Hamada and H. Tanigawa and T. Sakamoto and W. Cao and K. Parto and A. Hori and I. Muneta and T. Kawanago and K. Kakushima and K. Tsutsui and A. Ogura and K. Banerjee and H. Wakabayashi},
  title = {Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100779837,
  author = {Tomoaki Oba and Takamasa Kawanago and Shunri Oda},
  title = {Gated Four-Probe Method for Evaluation of Electrical Characteristics in MoS2 Field-Effect Transistors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779834,
  author = {大場智昭 and 川那子高暢 and 小田俊理},
  title = {ゲート付き4 端子法によるMoS2 FET の電気特性評価},
  booktitle = {第79回応用物理学会秋季学術講演会 講演予稿集},
  year = 2018,
}

@inproceedings{CTT100756056,
  author = {Ryo Ikoma and Takamasa Kawanago and Yukio Kawano},
  title = {Heavily-doped SOI with SAM-Based Gate Dielectrics in Application to TMDC FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100756055,
  author = {居駒遼 and 川那子高暢 and 河野行雄},
  title = {剥離転写法による高濃度ドープSOI基板を用いたTMDC-FETの作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100737113,
  author = {川那⼦⾼暢 and 居駒遼 and Du Wanjing and ⼩⽥俊理},
  title = {⾃⼰組織化単分⼦膜を⽤いたadhesion lithographyによるMoS2 FETの作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100734157,
  author = {T. Kawanago and S. Oda},
  title = {Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711245,
  author = {杜 婉静 and 川那子 高暢 and 小田 俊理},
  title = {Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100756054,
  author = {河野行雄 and 居駒遼 and 川那子高暢 and 小田俊理},
  title = {ジデシルホスホン酸(C12H25-PA)をゲート絶縁膜の用いたMoS2 FETの作製},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701253,
  author = {川那子 高暢 and 小田 俊理},
  title = {自己組織化単分子膜をゲート絶縁膜に用いた低電圧駆動MoS2 FETの作製},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701263,
  author = {本田 拓夢 and 米田 淳 and 武田 健太 and 川那子 高暢 and 小寺 哲夫 and 樽茶 清悟 and 小田 俊理},
  title = {多層Al ゲート構造を用いたSi-MOS 量子ドットデバイス作製プロセスの検討},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100676725,
  author = {N. Nishizawa and T. Kawanago and K. Kakushima and H. Munekata},
  title = {Formation of Ultra-thin, Crystalline AlOx Tunnel Barrier on GaAs and Vice Versa},
  booktitle = {Abstracts},
  year = 2014,
}

@inproceedings{CTT100673093,
  author = {雷 一鳴 and Shu Munekiyo and Kuniyuki KAKUSHIMA and Takamasa Kawanago and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and M. Furuhashi and N. Miura and S. Yamakawa},
  title = {Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672393,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674010,
  author = {雷 一鳴 and 宗清修 and 角嶋邦之 and 川那子高暢 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 古橋 壮之 and 三浦 成久 and 山川 聡},
  title = {ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674002,
  author = {譚錫昊 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830490,
  author = {T. Seki and T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Electrical and Infrared Absorption Studies on La-silicate/Si Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659873,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649139,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654160,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654679,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658112,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658365,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Infrared absorption study of La-silicate gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658546,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {International Symposium on Next-Generation Electronics(ISNE 2013)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658713,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Modeling of the Output Characteristics of Advanced N-MOSFETs After a Severe Gate-to-Channel Dielectric Breakdown},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660319,
  author = {川那子高暢 and 角嶋邦之 and 岩井洋},
  title = {高速・低損失の電子デバイス／パワーデバイスの先導研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660879,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661680,
  author = {宗清修 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830546,
  author = {T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100658065,
  author = {E. Mranda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  booktitle = {[588]	E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”,  ESREF2012, October, 2012, Cagliari, Italy},
  year = 2012,
}

@inproceedings{CTT100657562,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657561,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657348,
  author = {Kuniyuki KAKUSHIMA and Yuya Suzuki and ダリューシュザデ and Takamasa Kawanago and HIROSHI IWAI},
  title = {Development of Core Technologies for Green Nanoelectronics},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657187,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100622712,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627777,
  author = {田中 祐樹 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623983,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623969,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622686,
  author = {Takamasa Kawanago and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective process for oxygen defect suppression for La-based oxide gate dielectric},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100615536,
  author = {Ahmet Parhat and 来山大祐 and 金田 翼 and 鈴木  拓也 and Tomotsune Koyanagi and Miyuki Kouda and M. Mamatrishat and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Scaling of EOT Beyond 0.5nm},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613731,
  author = {M. Mamatrishat and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and A. Aierken and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613532,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616062,
  author = {鈴木 拓也 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603766,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸素添加がWゲートMOSデバイスの電気特性に与える影響},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100630990,
  author = {川那子高暢 and 鈴木 拓也 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597907,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597756,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Kiichi Tachi and Miyuki Kouda and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100586499,
  author = {Takamasa Kawanago and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET},
  booktitle = {INFOS2009},
  year = 2009,
}

@inproceedings{CTT100585430,
  author = {又野克哉 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Ge層挿入によるLa2O3-MOSキャパシタのVFB制御},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100830626,
  author = {K. Kakushima and K. Okamoto and K. Tachi and S. Sato and J. Song and T. Kawanago and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830637,
  author = {K. Kakushima and K. Tachi and M. Adachi and K. Okamoto and S. Sato and J. Song and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576524,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {La2O3/Si直接接合構造における界面特性の評価},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100830655,
  author = {K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Impact of Thin La2O3 Insertion for HfO2 MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830660,
  author = {Kuniyuki Kakushima and Kouichi Okamoto and Manabu Adachi and Kiichi Tachi and Jaeyeol Song and Soushi Sato and Takamasa Kawanago and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544406,
  author = {幸田みゆき and 川那子高暢 and 角嶋邦之 and パールハット・アヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Sc2O3ゲート絶縁膜のリーク電流機構の解析},
  booktitle = {秋季第68回応用物理学会学術講演会 講演予稿集},
  year = 2007,
}

@misc{CTT100710318,
  author = {角嶋邦之 and 川那子高暢 and 宗清修 and LEIYIMING and 古橋　壮之 and 三浦　成久},
  title = {半導体装置及びその製造方法},
  howpublished = {登録特許},
  year = 2018,
  month  = {},
  note   = {特願2014-173714(2014/08/28), 特開2016-048758(2016/04/07), 特許第6270667号(2018/01/12)}
}