@article{CTT100896542,
  author = {Masaki Otomo and Masaya Hamada and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@article{CTT100896543,
  author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung-Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2022,
}

@article{CTT100882668,
  author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure},
  journal = {Scientific Reports},
  year = 2022,
}

@article{CTT100881315,
  author = {Taiga Horiguchi and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874628,
  author = {M. Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and Yoshiaki Daigo and Ichiro Mizushima and T. Yoda and K. Kakushima},
  title = {Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100883067,
  author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875619,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100883068,
  author = {Ryota Shibukawa and Sung Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100880933,
  author = {Atsuki Miyata and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875615,
  author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
  title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875617,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Emi Kano and Nobuyuki Ikarashi and Hitoshi Wakabayash},
  title = {Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875618,
  author = {Takuya Hamada and Masaya Hamada and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875614,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875613,
  author = {Takuya Hamada and Masaya Hamada and Satoshi Igarashi and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855460,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855476,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {A possible origin of the large leakage current in ferroelectric Al1-xScxN films},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855475,
  author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855464,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855459,
  author = {S-L. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and T-K. Chung and E. Chang and K. Kakushima},
  title = {Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100855471,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855467,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855473,
  author = {Takuya Hamada and Shigetaka Tomiya and Tetsuya Tatsumi and Masaya Hamada and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855472,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation},
  journal = {Applied Physics Express (APEX)},
  year = 2021,
}

@article{CTT100855585,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Haruki Tanigawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100822931,
  author = {Kiyoshi Takeuchi and Munetoshi Fukui and Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Shinichi Suzuki and Yohichiroh Numasawa and Naoyuki Shigyo and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Masanori Tsukuda and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs},
  journal = {IEEE Trans. On Semiconductor Manufactureing},
  year = 2020,
}

@article{CTT100828640,
  author = {Jinan Song and Lyu Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100828639,
  author = {Haruki Tanigawa and Kentaro Matsuura and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100822934,
  author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100822933,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100821138,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@article{CTT100813951,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2019,
}

@article{CTT100808596,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing},
  journal = {Applied Physics Letters},
  year = 2019,
}

@article{CTT100809862,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI},
  title = {Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates},
  journal = {Japanese Journal of Applied Physics},
  year = 2019,
}

@article{CTT100782443,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100813953,
  author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2018,
}

@article{CTT100795209,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi and N. Ikarashi},
  title = {Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing},
  journal = {Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100780938,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing},
  journal = {JPN J APPL PHYS},
  year = 2018,
}

@article{CTT100813955,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakaw and Kuniyuki Kakushima},
  title = {Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@article{CTT100780935,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Investigation on Mo1-xWxS2 Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C4H9)2S2},
  journal = {JPN J APPL PHYS},
  year = 2018,
}

@article{CTT100813954,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakawa and Kuniyuki Kakushima},
  title = {Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@article{CTT100786664,
  author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Shin-ichi Nishizawa and Hiromichi Ohashi},
  title = {GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform},
  journal = {IET Power Electronics},
  year = 2018,
}

@article{CTT100780937,
  author = {N. Hayakawa and Iriya Muneta and Takumi Ohashi and Kenntarou Matsuura and Junnichi Shimizu and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Hitoshi Wakabayashi},
  title = {Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control},
  journal = {Japan Journal of Applied Physics},
  year = 2018,
}

@article{CTT100780936,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization},
  journal = {Journal of Electrical Materials},
  year = 2018,
}

@article{CTT100786663,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Kotaro Natori and Takayuki Muro and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography},
  journal = {Nano Letters},
  year = 2017,
}

@article{CTT100830482,
  author = {"K. Kakushima" and "T. Seki" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai"},
  title = {Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates},
  journal = {Vacuum},
  year = 2017,
}

@article{CTT100765856,
  author = {Takumi Ohashi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness},
  journal = {Applied Physics Express},
  year = 2017,
}

@article{CTT100765851,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition},
  journal = {MRS Advances},
  year = 2017,
}

@article{CTT100830080,
  author = {"Jun’ichi Shimizu" and "Takumi Ohashi" and "Kentaro Matsuura" and "Iriya Muneta" and "Kuniyuki Kakushima" and "Kazuo Tsutsui" and "Hitoshi Wakabayashi"},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2017,
}

@article{CTT100765852,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor},
  journal = {MRS Advances},
  year = 2017,
}

@article{CTT100765848,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and H. Wakabayashi and A. Ogura},
  title = {Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process},
  journal = {Journal of Materials Research},
  year = 2017,
}

@article{CTT100830486,
  author = {"R. Miyazawa" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells},
  journal = {International Journal of High Speed Electronics and Systems (IJHSES)},
  year = 2016,
}

@article{CTT100830088,
  author = {"M.S. Hadi" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100830087,
  author = {"J. Chen" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current},
  journal = {Microelectronic Reliability},
  year = 2016,
}

@article{CTT100830495,
  author = {"Tomoyuki Suzuki" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Hiroshi Iwai" and "Kuniyuki Kakushima"},
  title = {Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics},
  journal = {IEEE Electron Device Letters (EDL)},
  year = 2016,
}

@article{CTT100786666,
  author = {Yusuke Takei and Kazuo Tsutsui and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100830094,
  author = {"J. Chen" and "T. Kawanago" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "D. Nohata" and "H. Nohira" and "K. Kakushima"},
  title = {La2O3 gate dielectrics for AlGaN/GaN HEMT},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100765855,
  author = {Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@article{CTT100765854,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@article{CTT100765853,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Wakabayashi and A. Ogura},
  title = {Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast},
  journal = {ECS J. Solid State Sci. Technol.},
  year = 2016,
}

@article{CTT100759551,
  author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and H. Wakabayashi},
  title = {Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs},
  journal = {Japan Journal of Applied Physics},
  year = 2015,
}

@article{CTT100830498,
  author = {"Yusuke Takei" and "Masayuki Kamiya" and "Kazuo Tsutsui" and "Wataru Saito" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
  title = {Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  journal = {Physica Status Solidi A},
  year = 2015,
}

@article{CTT100801375,
  author = {Li, W. and Sasaki, A. and Oozu, H. and Aoki, K. and Kakushima, K. and Kataoka, Y. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Natori, K. and Iwai, H.},
  title = {Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes},
  journal = {Microelectronics Reliability},
  year = 2015,
}

@article{CTT100801614,
  author = {Li, W. and Sasaki, A. and Oozu, H. and Aoki, K. and Kakushima, K. and Kataoka, Y. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Natori, K. and Iwai, H.},
  title = {Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity},
  journal = {Microelectronics Reliability},
  year = 2015,
}

@article{CTT100830371,
  author = {"Mokh Hadi" and "Shinichi Kano" and "Kuniyuki Kakushima" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer},
  journal = {Semiconductor Science and Technology},
  year = 2014,
}

@article{CTT100830384,
  author = {"Y. Wu" and "H. Hasegawa" and "K. Kakushima" and "K. Ohmori" and "T. Watanabe" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "Y. Kataoka" and "K. Natori" and "K. Yamada" and "H. Iwai"},
  title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830372,
  author = {"Yusuke Takei" and "Mari Okamoto" and "Wataru Saito" and "Kazuo Tsutsui" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  journal = {ECS Transactions},
  year = 2014,
}

@article{CTT100830585,
  author = {"Chunmeng Dou" and "Tomoya Shoji" and "Kazuhiro Nakajima" and "Kuniyuki Kakushima" and "Parhat Ahmet" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830499,
  author = {"T. Kawanago" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT},
  journal = {IEEE Transaction on Electron Devices(T-ED)},
  year = 2014,
}

@article{CTT100830501,
  author = {"K. Tuokedaerhan" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain},
  journal = {Applied Physics Letters (APL)},
  year = 2014,
}

@article{CTT100801639,
  author = {Dou, C. and Shoji, T. and Nakajima, K. and Kakushima, K. and Ahmet, P. and Kataoka, Y. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Natori, K. and Iwai, H.},
  title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100801354,
  author = {Tuokedaerhan, K. and Kakushima, K. and Kataoka, Y. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Natori, K. and Iwai, H.},
  title = {Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain},
  journal = {Applied Physics Letters},
  year = 2014,
}

@article{CTT100801762,
  author = {Hadi, M.S. and Kano, S. and Kakushima, K. and Kataoka, Y. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Natori, K. and Iwai, H.},
  title = {A resistive switching device based on breakdown and anodic reoxidization of thin SiO2on Si-based electrodes using CeOxbuffer layer},
  journal = {Semiconductor Science and Technology},
  year = 2014,
}

@article{CTT100830612,
  author = {"K. Tuokedaerhan" and "R. Tan and K. Kakushima" and "P. Ahmet" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "T. Hattori" and "H. Iwai"},
  title = {Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application},
  journal = {Applied Physics Letters (APL)},
  year = 2013,
}

@inproceedings{CTT100903418,
  author = {梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100902988,
  author = {Ryosuke Kajikawa and Takamasa Kawanago and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903419,
  author = {今井 慎也 and 梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100902939,
  author = {岡村 俊吾 and 宗田 伊理也 and 白倉 孝典 and 若林 整},
  title = {MoS2極薄膜における磁化特性の層数依存性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903417,
  author = {寺岡 楓 and 今井 慎也 and 黒原 啓太 and 伊東 壮真 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 若林 整},
  title = {Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903415,
  author = {武田 高志 and 小野 凌 and 草間 優太 and 狩野 絵美 and 宗田 伊理也 and 若林 整 and 五十嵐 信行},
  title = {スパッタ成膜MoS2の基板上での原子分解能電子顕微鏡観察},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886128,
  author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896554,
  author = {濱田 昌也 and 松浦 賢太朗 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896555,
  author = {Peilong Wang and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896541,
  author = {Ryo Ono and Shinya Imai and Takamasa Kawanago and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896540,
  author = {Shinya Imai and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100905149,
  author = {Shonosuke Kimura and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896546,
  author = {水谷 一翔 and 星井 拓也 and 川那子 高暢 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896548,
  author = {小野 凌 and 今井 慎也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896549,
  author = {川那子 高暢 and 梶川 亮介 and 水谷 一翔 and Tsai Sung Lin and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100879798,
  author = {宗田 伊理也 and 白倉 孝典 and ファム ナムハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896550,
  author = {立松 真一 and 濱田 昌也 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アニール処理によるWS2-Niエッジコンタクト特性の向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896547,
  author = {今井 慎也 and 小野 凌 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
  title = {MoS2膜質のスパッタ成膜レート依存性調査},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100881317,
  author = {宗田 伊理也 and 白倉 孝典 and PHAM NAM HAI and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Ferromagnetism and current control of magnetoresistance  in two-dimensional polycrystalline MoS2},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875814,
  author = {阿野 響太郎 and 星井 拓也 and 若林 整 and 筒井 一生 and 依田 孝 and 角嶋 邦之},
  title = {ゲート付きSiC pnダイオードの電気特性評価},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100867380,
  author = {宗田 伊理也 and 白倉 孝典 and ファム ナム ハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100877154,
  author = {Kazuto Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877153,
  author = {Mitsuki Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877152,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877156,
  author = {Sho Sasaki and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Observation of ferroelectricity in atomic layer deposited AlN film},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875829,
  author = {小森 勇太 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875832,
  author = {小森 勇太 and 木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877149,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Nobuyuki Ikarashi and Hitoshi Wakabayashi},
  title = {Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877147,
  author = {Takuya Hamada and Taiga Horiguchi and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877142,
  author = {Masaya Hamada and Takuya Hamada and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}

@inproceedings{CTT100848915,
  author = {筒井一生 and 濱田拓也 and 高山 研 and 金 相佑 and 星井拓也 and 角嶋邦之 and 若林 整 and 高橋言緒 and 井手利英 and 清水三聡},
  title = {選択成長法を用いたGaN 系FinFET},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100855927,
  author = {A. Miyata and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855928,
  author = {"Atsuhiro Ohta and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima"},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855929,
  author = {H. Nishida and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {A simulation study on the transient leakage current analysis of a GaN epitaxial layer},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855926,
  author = {"Kazuto Mizutani and Yu-Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima"},
  title = {Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855925,
  author = {Y.-W. Lin and K. Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and Y.-F. Tsao and T.-J. Huang and H.-T. Hsu and K. Kakushima},
  title = {Ferroelectric HfO2 Capacitors for Varctor Application in GHz},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855924,
  author = {S. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848911,
  author = {筒井 一生 and 松橋 泰平 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 室 隆桂之 and 松下 智裕 and 森川 良忠},
  title = {AsおよびBの共ドープによるSi中Asクラスターの特性制御},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855932,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855933,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855934,
  author = {Sunglin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848904,
  author = {久恒 悠介 and 金 相佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {横型GaN FinFETの構造最適化についての検討},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848908,
  author = {高山 研 and 太田 貴士 and 佐々木 満孝 and 向井 勇人 and 濱田 拓也 and 高橋 言雄 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855937,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Shigetaka Tomiya and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848913,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852995,
  author = {Kazuto Mizutani and Yu Wei Lin and Takuya Hoshii and Hiroshi Funakubo and Hitoshi Wakabayashi and Kazuto Tsutsui and Kuniyuki Kakushima},
  title = {Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852900,
  author = {J. Molina and T. Mimura and Y. Nakamura and T. Shimizu and H. Funakubo and I. Fujiwara and T. Hoshii and S. Ohmi and A. Hori and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829205,
  author = {松浦 賢太朗 and 濱田 昌也 and 濱田 拓也 and 谷川 晴紀 and 坂本 拓朗 and 堀 敦 and 宗田 伊理也 and 川那子 高暢 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829204,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 布上 真也 and 名古 肇 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829203,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and 中島 昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板における2DEG枯渇電圧の解析的導出},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813992,
  author = {Takuya Hamada and Shinpei Yamaguchi and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813991,
  author = {K. Tsutsui and K. Natori and T. Ogawa and T. Muro and T. Matsuishita and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and K. Hayashi and F. Matsui and T. Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814075,
  author = {Ryunosuke Otsuki and Yuta Suzuki and Takuro Sakamoto and Takanori Shirokura and Iriya Muneta and Masahiro Nagao and Hitoshi Wakabayashi and Nobuyuki Ikarashi},
  title = {Structural analysis of MoS2 films fabricated by radiofrequency sputtering using highangle annular dark field scanning transmission electron microscopy},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833081,
  author = {渡辺正裕 and 執行直之 and 星井拓也 and 古川和由 and 角嶋邦之 and 佐藤克己 and 末代知子 and 更屋拓哉 and 高倉俊彦 and 伊藤一夫 and 福井宗利 and 鈴木慎一 and 竹内 潔 and 宗田伊里也 and 若林 整 and 中島 昭 and 西澤伸一 and 筒井一生 and 平本俊郎 and 大橋弘通 and 岩井洋},
  title = {トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813990,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813989,
  author = {Takuya Hoshii and Hiromasa Okita and Taihei Matsuhashi and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and Akira Nakajima and Kuniyuki Kakushima and Hitoshi Wakabayashi and Jen-Inn Chyi and Kazuo Tsutsui},
  title = {Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813988,
  author = {Y. W. Lin and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813987,
  author = {Jinhan Song and A. Ohta and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813986,
  author = {H. Tanigawa and K. Matsuura and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813985,
  author = {T. Kinoshita and T. Matsushita and T. Muro and T. Ohkochi and H. Osawa and K. Hayashi and F. Matsui and K.Tsutsui and K. Natori and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and A. Takeda and K. Terashima and W. Hosoda and T. Fukura and Y. Yano and H. Fujiwara and M. Sunagawa and H. Kato and T. Oguchi and T. Wakita and Y. Muraoka and T. Yokoya},
  title = {Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813981,
  author = {T. Hiramoto and T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohash},
  title = {Switching of 3300V Scaled IGBT by 5V Gate Drive},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829181,
  author = {今井 慎也 and 濱田 昌也 and 五十嵐 智 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {硫化プロセスにおけるスパッタMoS2膜質向上の重要性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100804206,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813980,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813982,
  author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829168,
  author = {宋 ジンハン and 太田 惇丈 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829169,
  author = {山岸 朋彦 and 堀 敦 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829170,
  author = {草深 一樹 and Sunglin Tsai and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングによって形成したAlScN膜のリーク電流の評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829171,
  author = {太田 惇丈 and 宋 禛漢 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {原子層堆積法を用いたイットリウムシリケート薄膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829172,
  author = {西田 宗史 and 星井 拓也 and 片岡 寛明 and 筒井 一生 and 角嶋 邦之 and 若林 整},
  title = {ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829173,
  author = {宮田 篤希 and 齋藤 大樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {4H-SiCエピタキシャル層によるX線検出に関する検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829174,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上GaNのためのMgF2バッファの検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829175,
  author = {蔡 松霖 and 草深 一樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングを用いたAlScN膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829176,
  author = {濱田 昌也 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829177,
  author = {堀口 大河 and 濱田 拓也 and 辰巳 哲也 and 冨谷 茂隆 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829178,
  author = {木村 安希 and 久永 真之佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829179,
  author = {谷川 晴紀 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829180,
  author = {五十嵐 智 and 望月 祐輔 and 谷川 晴紀 and 濱田 昌也 and 松浦 賢太朗 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829182,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and 中島 昭 and 角嶋 邦之 and 若林 整 and Jen-Inn Chyi and 筒井 一生},
  title = {TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829183,
  author = {高山 研 and 向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三総 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {GaN Fin構造選択成長における低抵抗領域の発生原因の検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829184,
  author = {向井 勇人 and 髙山 研 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829200,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829201,
  author = {濱田 拓也 and 堀口 大河 and 辰巳 哲也 and 冨谷 茂隆 and 濱田 昌也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829202,
  author = {沖田 寛昌 and 星井 拓也 and 松橋 泰平 and Sanyal Indraneel and Chen Yu-Chih and Ju Ying-Hao and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and Chyi Jen-Inn and 筒井 一生},
  title = {TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813979,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100821301,
  author = {Joel Molina-Reyes and Haruki Iwatsuka and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822935,
  author = {星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100809866,
  author = {筒井一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋邦之 and 若林整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100814076,
  author = {Iriya Muneta and Naoki Hayakawa and Takanori Shirokura and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetic tunnel devices with two-dimensional layered material MoS2},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813978,
  author = {K. Matsuura and M. Hamada and T. Hamada and H. Tanigawa and T. Sakamoto and W. Cao and K. Parto and A. Hori and I. Muneta and T. Kawanago and K. Kakushima and K. Tsutsui and A. Ogura and K. Banerjee and H. Wakabayashi},
  title = {Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813976,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813975,
  author = {K. Hisatsune and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813974,
  author = {J. Molina and H. Iwatsuka and T. Hoshii and S. Ohmi and H. Funakubo and A. Hori and I. Fujiwara and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813973,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Yohichiroh Numasawa and Katsumi Satoh and Tomoko Matsudai and Wataru Saito and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Naoyuki Shigyo and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Shin-Ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramo},
  title = {3300V Scaled IGBTs Driven by 5V Gate Voltag},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813972,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813970,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816749,
  author = {松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 谷川 晴紀 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816750,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813971,
  author = {Takeya Inoue and Takuya Hoshii and Takuo Kikuchi and Hidehiko Yabuhara and Kazuyuki Ito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Junichi Tonotani and Kazuo Tsutsui},
  title = {Fundamental study on reducing on-resistance by introducing strain  into silicon vertical power devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816747,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816748,
  author = {濱田 拓也 and 向井 勇人 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816745,
  author = {筒井一生 and 松下智裕 and 室隆桂之 and 森川良忠 and 名取鼓太郎 and 小川達博 and 星井拓也 and 角嶋邦之 and 若林整 and 林好一 and 松井文彦 and 木下豊彦},
  title = {光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816746,
  author = {松浦賢太朗 and 清水淳一 and 外山真矢人 and 大橋匠 and 坂本拓朗 and 宗田伊理也 and 石原聖也 and 角嶋邦之 and 筒井一生 and 小椋厚志 and 若林整},
  title = {大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100792973,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Magnetic property in sputtered MoS2 thin film on growth temperature},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100842523,
  author = {S. Ishihara and Y. Hibino and Y. Oyanagi and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Stimulating Raman Spectra of Sputtering Deposited Polycrystalline MoS2 Films by Phonon Confinement Model},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786671,
  author = {Takuya Hamada and Hayato Mukai and Tokio Takahashi and Toshihide Ide and Mitsuaki Shimizu and Hiroki Kuroiwa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Kazuo Tsutsui},
  title = {Electrical properties of selectively grown GaN channel for FinFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786672,
  author = {Takuya Hoshii and Shuma Tsuruta and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100842524,
  author = {Y. Oyanagi and Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Fabrication of WS2 Film by DC Bias Applied High-Temperature Sputtering},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100880842,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Measurement for SiC Epitaxial Layer},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795212,
  author = {M. Hamada and K. Matsuura and T. Sakamoto and H. Tanigawa and T. Ohashi and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813966,
  author = {Toyohiko Kinoshita and Tomohiro Matsushita and Takayuki Muro and Takuo Ohkochi and Hitoshi Osawa and Kouichi Hayashi and Fumihiko Matsui and Kazuo Tsutsui and Kotaro Natori and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Aya Taked and Kensei Terashim and Wataru Hosoda and Tetsuji Fukura and Yuukou Yano and Hirohkazu Fujiwara and Masanori Sunagawa and Hiromitsu Kato and Tamio Oguchi and Takanori Wakita and Yuuji Muraoka and Takayoshi Yokoya},
  title = {Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795211,
  author = {T. Sakamoto and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and Y. Suzuki and N. Ikarashi and H. Wakabayashi},
  title = {Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780958,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Centimeter-scale high-performance few-layer MoS2 fabricated by RF magnetron sputtering and subsequent post-deposition annealing},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816737,
  author = {岩塚 春樹 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Siを導入したHfO2のMIMキャパシタの容量特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816734,
  author = {清水 孝 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {TMAHによる表面処理のp型GaN/金属コンタクト特性への影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816733,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816732,
  author = {久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816731,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816740,
  author = {五十嵐 智 and 松浦 賢太朗 and 濱田 昌也 and 谷川 晴紀 and 坂本 拓朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816738,
  author = {佐々 康平 and 久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {酸化セリウムを挿入したMIMキャパシタの充放電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816741,
  author = {向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786670,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816739,
  author = {佐々木 杏民 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816736,
  author = {久永 真之佑 and 渡部 拓巳 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816735,
  author = {鶴田 脩真 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813965,
  author = {Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Masahiro Watanabe and Naoyuki Shigyo and Takuya Saraya and Toshihiko Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Sinichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813968,
  author = {Kazuya Hisatsune and Yoshihisa Takaku and Kohei Sasa and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816742,
  author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816743,
  author = {小川 達博 and 名取 鼓太郎 and 星井 拓也 and 仲武 昌史 and 渡辺 義夫 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100792974,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Growth temperature dependence of magnetic property of sputtered MoS2 thin film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816744,
  author = {松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 大橋 匠 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780955,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Low-temperature solid-phase crystallization of sputtering deposited quasi-layered MoS2 thin film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816730,
  author = {濱田拓也 and 向井勇人 and 高橋言緒 and 井手利英 and 清水三聡 and 星井拓也 and 角嶋邦之 and 若林整 and 岩井洋 and 筒井一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100814262,
  author = {I. Muneta and Danial B. Z. and N. Hayakawa and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813959,
  author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
  title = {New methodology for evaluating minority carrier lifetime for process assessment},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813957,
  author = {C. Y. Su and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813958,
  author = {D. Saito and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Reliability of SiC Schottky Diodes with Mo2C Electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100842522,
  author = {Y. Hibino and S. Ishihara and Y. Oyanagi and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias},
  booktitle = {ECS Transactions},
  year = 2018,
}

@inproceedings{CTT100813956,
  author = {H. Kataoka and H. Iwai and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {A Defect Density Profile Extraction Method for GaN Epi-Wafers},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904005,
  author = {坂本 拓朗 and 大橋 匠 and 松浦 賢太朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904007,
  author = {安重 英祐 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780959,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Investigation of MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904006,
  author = {Zulkornain Bin Danial and 宗田 伊理也 and 早川 直希 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100818000,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate},
  booktitle = {2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings},
  year = 2018,
}

@inproceedings{CTT100780957,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904004,
  author = {大橋 匠 and 坂本 拓朗 and 松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 石原 聖也 and 日比野 祐介 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {Migration制御したスパッタリング法による2次元層状MoS2成膜},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904002,
  author = {Chen-Yi Su and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786669,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830068,
  author = {Suguru Tatsunokuchi and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and HIROSHI IWAI and K. Kakushima},
  title = {Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830066,
  author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786668,
  author = {Kotaro Natori and Tatsuhiro Ogawa and Takuya Hoshii and Tomohiro Matsushia and Takayuki Muro and Toyohiko Kinoshita and Yoshitada Morikawa and Kuniyuki Kakushima and Fumihiko Matsui and Kouichi Hayashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830067,
  author = {Suguru Tatsunokuchi and Iriya Muneta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Photovoltaic Properties of Lateral Si Nano Wall Solar Cells},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100809869,
  author = {筒井一生 and 角嶋邦之 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 若林整 and 宗田伊理也 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 更屋 拓哉 and 伊藤 一夫 and 福井 宗利 and 鈴木 慎一 and 小林 正治 and 高倉 俊彦 and 平本 俊郎 and 小椋 厚志 and 沼沢 陽一郎 and 大村 一郎 and 大橋 弘通 and 岩井洋},
  title = {三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)},
  booktitle = {電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan},
  year = 2017,
}

@inproceedings{CTT100808048,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100811306,
  author = {K. Tsutsui and K. Kakushima and T. Hoshii and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)},
  booktitle = {Proceedings of International Conference on ASIC},
  year = 2017,
}

@inproceedings{CTT100786678,
  author = {Takuya Hoshii and Rumi Takayama and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100788575,
  author = {N. Hayakawa and I. Muneta and T. Ohashi and K. Matsuura and J. Shimizu and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100808047,
  author = {岡田 泰典 and 山口 晋平 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100780963,
  author = {S. Hirano and J. Shimizu and K. Matsuura and T. Ohashi and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100780961,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi},
  title = {Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100830069,
  author = {K. Kakushima and T. Suzuki and T. Hoshii and I. Muneta and H. Wakabayashi and HIROSHI IWAI and Y. Aoki,H. Nohira Aoki and KAZUO TSUTSUI},
  title = {Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830070,
  author = {K. Kakushima and Yuta Ikeuchi and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and T. Kikuchi and S. Ishikawa},
  title = {Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903975,
  author = {早川直希 and 宗田伊理也 and 大橋匠 and 松浦賢太朗 and 清水淳一 and 角嶋邦之 and 筒井一生 and 若林整},
  title = {トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903978,
  author = {外山 真矢人 and 大橋 匠 and 松浦 賢太朗 and 清水 淳一 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903977,
  author = {篠原 健朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903976,
  author = {龍口 傑 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 岩井 洋 and 角嶋 邦之},
  title = {横型Siナノウォール太陽電池の発電特性に関する検討},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100801552,
  author = {Okada, Y. and Yamaguchi, S. and Ohashi, T. and Muneta, I. and Kasushima, K. and Tsutsui, K. and Hitoshi Wakabayashi},
  title = {Resistivity reduction of low-carrier-density sputtered-MoS2film using fluorine gas},
  booktitle = {17th International Workshop on Junction Technology, IWJT 2017},
  year = 2017,
}

@inproceedings{CTT100786667,
  author = {K. Kakushima and T. Hoshii and K. Tsutsui and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830077,
  author = {Tomoyuki Suzuki and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Hiroshi Nohira and Kuniyuki Kakushima},
  title = {Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830074,
  author = {Y. M. Lei and T. Kaneko and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and M. Furuhashi and S. Tomohisa and S. Yamakawa},
  title = {Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830071,
  author = {Y. Ikeuchi and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and S.Ishikawa},
  title = {Characteristics of Fe/pGaN Contact upon Annealing Process},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100903979,
  author = {安重 英祐 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100780956,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830120,
  author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Sin-ichi Nishizawa and Hiromichi Ohashi},
  title = {Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100802077,
  author = {米田 允俊 and 武田 さくら and 田口 宗孝 and 松田 博之 and 大橋匠 and 清水 淳一 and Artoni Kevin Roquero Ang and 橋本 由介 and 深見 駿 and 田中 一光 and 岡本 隆志 and 江波戸 達哉 and 大門 寛 and 若林整 and 木下 豊彦},
  title = {スパッタ法で作成されたMoS2薄膜のRHEEDと光電子分光による評価},
  booktitle = {表面科学学術講演会要旨集},
  year = 2016,
}

@inproceedings{CTT100780948,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and N. Sawamoto and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film},
  booktitle = {Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)},
  year = 2016,
}

@inproceedings{CTT100830121,
  author = {Yusuke Takei and Tomohiro Shimoda and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai},
  title = {Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830122,
  author = {Shunsuke Kubota and Rei Kayanuma and Akira Nakajima and Shin-ichi Nishizawa and Shin-ichi Nishizawa and Hiromichi Ohashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830127,
  author = {A. Nakajima and S. Kubota and R. Kayanuma and K. Tsutsui and K. Kakushima and H. Wakabayashi and H. Iwai and S. Nishizawa and H. Ohashi},
  title = {An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830125,
  author = {Akira Nakajima and Shin-Ichi Nishizawa and Hiromichi Ohashi and Rei Kayanuma and Kazuo Tsutsui and Shunsuke Kubota and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100801572,
  author = {Nakajima, A. and Nishizawa and S.-I. and Kubota, S. and Kayanuma, R. and Tsutsui, K. and Ohashi, H. and Kakushima, K. and Hitoshi Wakabayashi and Iwai, H.},
  title = {An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform},
  booktitle = {2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015},
  year = 2015,
}

@inproceedings{CTT100801650,
  author = {Imamura, H. and Kakushima, K. and Kataoka, Y. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Natori, K. and Iwai, H.},
  title = {Influence of sputtering gas on resistivity of thin Ni silicide films},
  booktitle = {China Semiconductor Technology International Conference 2015, CSTIC 2015},
  year = 2015,
}

@inproceedings{CTT100801457,
  author = {Baba, T. and Kakushima, K. and Hitoshi Wakabayashi and Tsutsui, K. and Iwai, H.},
  title = {An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT},
  booktitle = {WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications},
  year = 2015,
}

@inproceedings{CTT100801423,
  author = {Nakajima, A. and Nishizawa and S.-I. and Ohashi, H. and Kayanuma, R. and Tsutsui, K. and Kubota, S. and Kakushima, K. and Hitoshi Wakabayashi and Iwai, H.},
  title = {GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform},
  booktitle = {Proceedings of the International Symposium on Power Semiconductor Devices and ICs},
  year = 2015,
}

@inproceedings{CTT100780947,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Low Temperature Formation of Layered MoS2 by Sulfurization of E-Beam Evaporated Mo Thin Film Using (t-C4H9)2S2},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100780946,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Fabrication of High-Quality Single- and Few-Layer MoS2 Films by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100780944,
  author = {S. Ishihara and K. Suda and Y. Hibino and N. Sawamoto and T. Ohashi and S. Yamaguchi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100780943,
  author = {S. Ishihara and K. Suda and Y. Hibino and N. Sawamoto and T. Ohashi and S. Yamaguchi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy},
  booktitle = {MRS Proceedings},
  year = 2015,
}

@inproceedings{CTT100830262,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and K. Natori and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830263,
  author = {T. Shoji and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830265,
  author = {Kazuo Tsutsui and Masayuki Kamiya and Yusuke Takei and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Yoshinori Kataoka and Hiroshi Iwai},
  title = {Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830266,
  author = {Y. Takei and M. Okamoto and W. Saito and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y. Kataoka and H. Iwai},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830484,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830277,
  author = {T. Ohashi and H. Wakabayashi and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830471,
  author = {K. Terayama and A. Nakajima and S. Nishizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830473,
  author = {Y. Ito and H. Hori and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y.Kataoka and A.Nishiyama and N. Sugii and K. Natori and H. Iwai},
  title = {Proposal of junction formation process for solar cells made of silicon microstructures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830474,
  author = {M. Kamiya and Y. Takei and W. Saito and K. Kakushima and H. Wakabayashi and Y. Kataoka and K. Tsutsui and H. Iwai},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830478,
  author = {T. Kato and T.Inamura and A.Sasaki and K.Aoki and K.Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Thickness-dependent electrical characterization of β‐FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830479,
  author = {Minjae Yoon and K. Terayama and A. Nakajima and S. Nichizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830480,
  author = {M. Motoki and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830481,
  author = {H. Hasegawa and Y.Wu and J.Song and K. Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830483,
  author = {Y. Nakamura and K. Kakushima and Y. Kataoka and A. Nishiyama and H. Wakabayashi and N. Sugii and K. Tsutsui and K. Natori and H. Iwai},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830485,
  author = {Chunmeng Dou and Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100801489,
  author = {Lei, Y.M. and Munekiyo, S. and Kawanago, T. and Kakushima, K. and Kataoka, K. and Hitoshi Wakabayashi and Tsutsui, K. and Natori, K. and Iwai, H. and Furuhashi, M. and Miura, N.},
  title = {Enhanced oxidation of sic substrates using La2O3capped annealing and a proposal for uniform LaSiON gate dielectric formation},
  booktitle = {2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014},
  year = 2014,
}

@inproceedings{CTT100801445,
  author = {Hitoshi Wakabayashi},
  title = {Progress and benchmarking of CMOS-device technologies},
  booktitle = {2014 International Conference on Electronics Packaging, ICEP 2014},
  year = 2014,
}

@inproceedings{CTT100672972,
  author = {Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Hitoshi Wakabayashi and Nobuyuki Sugii and HIROSHI IWAI},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672971,
  author = {Tomoya Shoji and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672969,
  author = {Hiroaki Imamura and Taichi Inamura and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672968,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672967,
  author = {吉原亮 and Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Interface control process toward un-pinned metal/germanium Schottky contact},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672966,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Atomically flat interface of La-silicate/Si with W2C gate electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672964,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672963,
  author = {関拓也 and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672961,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and Akira Nishiyama and Nobuyuki Sugii and 片岡好則 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Effect of pretreatment for high-/k//InGaAs interface property},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672910,
  author = {Taichi Inamura and Takafumi Katou and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on silicide semiconductors for high efficiency thin film photovoltaic devices},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672909,
  author = {Jiangning Chen and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and 齋藤渉},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672908,
  author = {wei li and 佐々木亮人 and 大図秀行 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672427,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode},
  booktitle = {K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan},
  year = 2014,
}

@inproceedings{CTT100672409,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and HIROSHI IWAI},
  title = {Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672405,
  author = {unknown unknown and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672393,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672372,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672369,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669358,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674049,
  author = {武井優典 and 岡本真里 and マンシン and 萱沼怜 and 神谷真行 and 齋藤渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669171,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674050,
  author = {堀隼人 and 伊藤勇磨 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {薄膜SOI太陽電池の発電特性への基板バイアス効果},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674051,
  author = {寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674052,
  author = {米澤宏昭 and 萱沼怜 and 中島 昭 and 西澤伸一 and 大橋弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674053,
  author = {伊藤勇磨 and 堀隼人 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {微細Si構造を利用した太陽電池に適した接合プロセスの提案},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674087,
  author = {神谷真行 and 武井優典 and 齋藤渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674681,
  author = {小路智也 and 伊藤勇磨 and 堀隼人 and 宮澤遼太 and 嘉藤貴史 and 角嶋邦之 and 若林整 and 筒井一生 and 片岡好則 and 岩井洋},
  title = {Surface States, Potential and Interface Control for Si Nanowire PV},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100780941,
  author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and Hitoshi Wakabayashi},
  title = {Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs},
  booktitle = {Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials},
  year = 2014,
}

@inproceedings{CTT100780942,
  author = {T. Ohashi and S. Yamaguchi and K. Matsuura and H. Wakabayashi},
  title = {Sputtered MoS2 Film for Future High-Performance Nanoelectronic Devices},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673475,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Siナノワイヤー曲面における保護膜界面準位密度の研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673477,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673999,
  author = {元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830267,
  author = {Akira Nakajima and Sin-ichi Nishizawa and Hiromichi Ohashi and Hiroaki Yonezawa and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100801213,
  author = {Munekiyo, S. and Lei, Y.M. and Natori, K. and Iwai, H. and Kawanago, T. and Kakushima, K. and Kataoka, K. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Furuhashi, M. and Miura, N. and Yamakawa, S.},
  title = {Passivation of SiO2/SiC interface with La2O3capped oxidation},
  booktitle = {2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014},
  year = 2014,
}

@inproceedings{CTT100801189,
  author = {Okamoto, M. and Kakushima, K. and Kataoka, Y. and Nishiyama, A. and Sugii, N. and Hitoshi Wakabayashi and Tsutsui, K. and Iwai, H. and Saito, W.},
  title = {Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure},
  booktitle = {2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014},
  year = 2014,
}

@inproceedings{CTT100674002,
  author = {譚錫昊 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673474,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 大橋弘通 and 岩井洋 and 齋藤渉},
  title = {TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674004,
  author = {劉 璞誠 and 竇春萌 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674010,
  author = {雷 一鳴 and 宗清修 and 角嶋邦之 and 川那子高暢 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 古橋 壮之 and 三浦 成久 and 山川 聡},
  title = {ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674044,
  author = {Yoon Minjae and 寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674046,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673473,
  author = {今村浩章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673472,
  author = {吉原亮 and 元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673471,
  author = {細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673468,
  author = {関拓也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673467,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673466,
  author = {稲村太一 and 嘉藤貴史 and 佐々木亮人 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {β-FeSi2の抵抗率熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673464,
  author = {LiWei and 佐々木亮人 and 大図 秀行 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {単斜晶WO3薄膜抵抗率の熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673463,
  author = {陳江寧 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673462,
  author = {呉研 and 長谷川明紀 and 角嶋邦之 and 渡辺  孝信 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673460,
  author = {Tuokedaerhan Kamale and Shuhei Hosoda and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {W2Cゲート電極によるLa-silicate MOSFETの移動度改善},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673418,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673381,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {立体Si構造における局所的な界面準位密度の抽出},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673377,
  author = {中島 昭 and Hiroaki Yonezawa and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and 西澤伸一 and 大橋弘通 and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673190,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673189,
  author = {Takumi Ohashi and Hitoshi Wakabayashi and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and Akira Nishiyama and Yoshinori Kataoka and Kenji Natori and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673188,
  author = {Hayato Hori and Yuuma Itou and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Effects of substrate back bias on solar cells formed on thin SOI structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673186,
  author = {Sin Man and Rei Kayanuma and Yusuke Takei and T. Takahashi and M. Shimizu and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {A Study on the Fabrication of GaN-FinFET Using  Selective Area Growth Method},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673182,
  author = {Kazuma Terayama and 中島 昭 and 西澤伸一 and 大橋弘通 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Caluculation of ultimate on-resistance in GaN lateral HFETs  using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673181,
  author = {Hiroaki Yonezawa and Rei Kayanuma and 中島 昭 and 西澤伸一 and 大橋弘通 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {AlGaN/GaN-based p-channel HFETs with wide-operating temperature},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673180,
  author = {Yuuma Itou and Hayato Hori and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Schottky barrier height reduction process for silicide/Si interfaces},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673149,
  author = {Masayuki Kamiya and Yusuke Takei and 齋藤渉 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673148,
  author = {Yusuke Takei and Mari Okamoto and S. Man and Ryosuke Kayanuma and Masayuki Kamiya and 齋藤渉 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Contact resistances depending on AlGaN layer thickness  for AlGaN/GaN HEMT structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673145,
  author = {Yoshihiro Matsukawa and Mari Okamoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673095,
  author = {Takafumi Katou and Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristic of b-FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673093,
  author = {雷 一鳴 and Shu Munekiyo and Kuniyuki KAKUSHIMA and Takamasa Kawanago and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and M. Furuhashi and N. Miura and S. Yamakawa},
  title = {Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672974,
  author = {Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672973,
  author = {Hiroki Hasegawa and Y. Wu and 宋 禛漢 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {The Workshop on Future Trend of Nanoelectronics:WIMNACT 39},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100801979,
  author = {若林整},
  title = {新版 ULSIデバイス・プロセス技術, 菅野卓雄(監修), 伊藤隆司(編著), 電子情報通信学会, 2013-05, A5判, 定価(本体5,600円+税)},
  booktitle = {電子情報通信学会誌},
  year = 2013,
}

@inproceedings{CTT100669354,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669175,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669355,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669173,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100830488,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki Kakushima and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kenji Natori and Hiroshi Iwai},
  title = {Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100669174,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100660879,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658699,
  author = {Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Interface State Density of Passivation/Nanowire Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661663,
  author = {嘉藤貴史 and 稲村太一 and 佐々木 亮人 and 青木 克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661664,
  author = {劉 璞誠 and 米澤宏昭 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaNのドライエッチングへのBcl3の影響に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662341,
  author = {宋 禛漢 and 松本一輝 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Niシリサイドナノワイヤ抵抗率のNi膜厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662340,
  author = {鹿国強 and 大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662339,
  author = {今村浩章 and 稲村太一 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662338,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662337,
  author = {小路智也 and 石川昂 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662336,
  author = {中村嘉基 and 細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 若林整 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661681,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661680,
  author = {宗清修 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661678,
  author = {元木雅章 and 吉原亮 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661665,
  author = {譚錫昊 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661653,
  author = {米澤宏昭 and 中島  昭 and 西澤 伸一 and 大橋 弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {AlGaN/GaN系pチャンネルHFETの製作},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660886,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100801225,
  author = {Hitoshi Wakabayashi},
  title = {Progress and prospects of silicon transistors based on junction technologies},
  booktitle = {Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013},
  year = 2013,
}

@inproceedings{CTT100661655,
  author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660888,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661657,
  author = {神谷真行 and 寺山一真 and 武井優典 and 齋藤 渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661659,
  author = {大橋匠 and 若林整 and 角嶋邦之 and 杉井信之 and 西山彰 and 片岡好則 and 名取研二 and 筒井一生 and 岩井洋},
  title = {単層MoS2チャネルを用いたn-MOSFETの性能見積もり},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661660,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661649,
  author = {石川昂 and 小路智也 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた三次元Si構造の界面準位密度測定},
  booktitle = {},
  year = 2013,
}

@misc{CTT100801725,
  author = {Ohno, H. and Yamamoto, M. and Endoh, T. and Ando, Y. and Hanyu, T. and Itoh, K.M. and Tanaka, M. and Mitani, S. and Hitoshi Wakabayashi},
  title = {FOREWORD: Spintronics materials and devices for working memory technology},
  year = 2017,
}

@misc{CTT100801889,
  author = {若林整},
  title = {シリコントランジスタのあゆみと将来},
  year = 2013,
}

@misc{CTT100801474,
  author = {Hitoshi Wakabayashi and Schruefer, K.},
  title = {Foreword: Welcome to the 2013 symposium on VLSI technology},
  year = 2013,
}

@misc{CTT100840044,
  author = {堀敦 and 若林整 and 伊藤浩之 and 日向寺　朗 and 亘理　誠夫 and 新田　元},
  title = {センシングシステム、センサ端末},
  howpublished = {登録特許},
  year = 2023,
  month  = {},
  note   = {特願2019-015545(2019/01/31), 特開2020-123216(2020/08/13), 特許第7217000号(2023/01/23)}
}