@article{CTT100885805,
  author = {Arisa Kimura and Kaito Kuroki and Ryoichiro Yoshida and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@article{CTT100885956,
  author = {Kaito Kuroki and Arisa Kimura and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@article{CTT100874628,
  author = {M. Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and Yoshiaki Daigo and Ichiro Mizushima and T. Yoda and K. Kakushima},
  title = {Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874132,
  author = {Takashi Yoda and Noboru Ishihara and Yuta Oshima and Motoki Ando and Kohei Kashiwagi and Ryoichiro Yoshida and Arisa Kimura and Kaito Kuroki and Shinsuke Nabeya and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Hiroyuki Ito},
  title = {Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874137,
  author = {Munehiro Ogasawara and Ryoichiro Yoshida and Yuta Oshima and Motoki Ando and Arisa Kimura and Kenji Hirakawa and Masayuki Iwase and Shinsuke Nabeya and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@article{CTT100874327,
  author = {Kenta Chokawa and Yoshiaki Daigo and Ichiro Mizushima and Takashi Yoda and Kenji Shiraishi},
  title = {First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@inproceedings{CTT100884713,
  author = {Kaito Kuroki and Arisa Kimura and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect},
  booktitle = {International Conference on Solid State Devices and Materials},
  year = 2022,
}

@inproceedings{CTT100884714,
  author = {Arisa Kimura and Kaito Kuroki and Ryoichiro Yoshida and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito},
  title = {CMOS Inverter-Base Ring Oscillator Design and Evaluation Against gray Total Ionizing Dose Effect},
  booktitle = {International Conference on Solid State Devices and Materials},
  year = 2022,
}

@inproceedings{CTT100875814,
  author = {阿野 響太郎 and 星井 拓也 and 若林 整 and 筒井 一生 and 依田 孝 and 角嶋 邦之},
  title = {ゲート付きSiC pnダイオードの電気特性評価},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100885804,
  author = {木村有佐 and 黒木海斗 and 吉田僚一郎 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {リング発振ICのγ線照射影響の回路モデル化},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100885955,
  author = {黒木 海斗 and 木村 有佐 and 吉田 僚一郎 and 平川 顕二 and 岩瀬 正幸 and 小笠原 宗博 and 依田 孝 and 石原 昇 and 伊藤 浩之},
  title = {CMOS集積回路におけるリーク電流への γ線照射の影響},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100877153,
  author = {Mitsuki Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100885803,
  author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {P型とN型のFETサイズ比が異なるCMOS論理回路へのγ線照射の影響},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875829,
  author = {小森 勇太 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875832,
  author = {小森 勇太 and 木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100884747,
  author = {吉田僚一郎 and 木村有佐 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 石原昇 and 小笠原宗博 and 依田孝 and 伊藤浩之},
  title = {ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計},
  booktitle = {情報処理学会シンポジウムシリーズ},
  year = 2021,
}

@inproceedings{CTT100885802,
  author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {CMOSリング発振回路へのγ線照射の影響とその要因解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100865291,
  author = {Takashi Yoda and Noboru Ishihara and Yuta Oshima and Motoki Ando and Ryoichiro Yoshida and Shinsuke Nabeya and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Hiroyuki Ito},
  title = {CMOS 2-D Array Data Transfer Circuit Design and Evaluation for Use in A Radiation Environment},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100885801,
  author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {リング発振回路におけるELTの耐放射線評価},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100848913,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100842070,
  author = {吉田僚一郎 and 木村有佐 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {高累積線量におけるMOSFETのゲートバイアス特性比較},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829204,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 布上 真也 and 名古 肇 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100880831,
  author = {富澤 巧 and 川上 賢人 and 櫻井 照夫 and 草場 彰 and 岡本 直也 and 芳松 克則 and 醍醐 佳明 and 水島 一郎 and 依田 孝 and 寒川 義裕 and 柿本 浩一 and 白石 賢二},
  title = {縦型結晶成長装置におけるGaN MOVPEシミュレーション},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100880818,
  author = {安藤幹 and 大島佑太 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {CMOS論理回路におけるTIDの影響評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100880813,
  author = {大島佑太 and 安藤幹 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之},
  title = {TID影響下におけるMOSFETの動的特性劣化モデルの開発},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100880842,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Measurement for SiC Epitaxial Layer},
  booktitle = {},
  year = 2018,
}