@article{CTT100845762,
  author = {T. Aota and A. Hayasaka and I. Makabe and S. Yoshida and T. Gotow and Y. Miyamoto},
  title = {Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@inproceedings{CTT100887485,
  author = {K. Makiyama and S. Yoshida and K. Nakata and Y. Miyamoto},
  title = {Innovative RF Device Technologies for Advanced Information and Communications Network Society},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100842580,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100842581,
  author = {青田 智也 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
  title = {N極性GaN HEMT構造での無電極PECエッチング},
  booktitle = {},
  year = 2020,
}