@article{CTT100800228,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {真空アニール法がAl2O3/GaSb MOS界面に与える影響},
  journal = {電子情報通信学会技術研究報告 信学技報},
  year = 2013,
}

@inproceedings{CTT100800769,
  author = {Takahiro Gotow and Sachie Fujikawa and Hiroki Fujishiro and Mutsuo Ogura and Tetsuji Yasuda and Tatsuro Maeda},
  title = {Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100803035,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {GaSbショットキー接合型メタルS/D pMOSFETsの動作実証},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100803034,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {真空アニール法がAl2O3/GaSb MOS界面に与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100803033,
  author = {後藤高寛 and 原紳介 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {GaAs上GaSb MOS構造の作製},
  booktitle = {},
  year = 2013,
}