@article{CTT100700939,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum},
  journal = {Applied Physics Letters},
  year = 2016,
}

@article{CTT100711249,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors},
  journal = {Applied Physics Letters},
  year = 2016,
}

@article{CTT100830094,
  author = {"J. Chen" and "T. Kawanago" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "D. Nohata" and "H. Nohira" and "K. Kakushima"},
  title = {La2O3 gate dielectrics for AlGaN/GaN HEMT},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@inproceedings{CTT100734157,
  author = {T. Kawanago and S. Oda},
  title = {Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100756054,
  author = {河野行雄 and 居駒遼 and 川那子高暢 and 小田俊理},
  title = {ジデシルホスホン酸(C12H25-PA)をゲート絶縁膜の用いたMoS2 FETの作製},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711245,
  author = {杜 婉静 and 川那子 高暢 and 小田 俊理},
  title = {Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701253,
  author = {川那子 高暢 and 小田 俊理},
  title = {自己組織化単分子膜をゲート絶縁膜に用いた低電圧駆動MoS2 FETの作製},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701263,
  author = {本田 拓夢 and 米田 淳 and 武田 健太 and 川那子 高暢 and 小寺 哲夫 and 樽茶 清悟 and 小田 俊理},
  title = {多層Al ゲート構造を用いたSi-MOS 量子ドットデバイス作製プロセスの検討},
  booktitle = {},
  year = 2016,
}

@misc{CTT100710318,
  author = {角嶋邦之 and 川那子高暢 and 宗清修 and LEIYIMING and 古橋　壮之 and 三浦　成久},
  title = {半導体装置及びその製造方法},
  howpublished = {登録特許},
  year = 2018,
  month  = {},
  note   = {特願2014-173714(2014/08/28), 特開2016-048758(2016/04/07), 特許第6270667号(2018/01/12)}
}