@article{CTT100830486,
  author = {"R. Miyazawa" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells},
  journal = {International Journal of High Speed Electronics and Systems (IJHSES)},
  year = 2016,
}

@article{CTT100830087,
  author = {"J. Chen" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current},
  journal = {Microelectronic Reliability},
  year = 2016,
}

@article{CTT100830088,
  author = {"M.S. Hadi" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100830495,
  author = {"Tomoyuki Suzuki" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Hiroshi Iwai" and "Kuniyuki Kakushima"},
  title = {Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics},
  journal = {IEEE Electron Device Letters (EDL)},
  year = 2016,
}

@article{CTT100786666,
  author = {Yusuke Takei and Kazuo Tsutsui and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100765854,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@article{CTT100830094,
  author = {"J. Chen" and "T. Kawanago" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "D. Nohata" and "H. Nohira" and "K. Kakushima"},
  title = {La2O3 gate dielectrics for AlGaN/GaN HEMT},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100765855,
  author = {Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@article{CTT100765853,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Wakabayashi and A. Ogura},
  title = {Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast},
  journal = {ECS J. Solid State Sci. Technol.},
  year = 2016,
}

@inproceedings{CTT100830077,
  author = {Tomoyuki Suzuki and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Hiroshi Nohira and Kuniyuki Kakushima},
  title = {Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100786667,
  author = {K. Kakushima and T. Hoshii and K. Tsutsui and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830074,
  author = {Y. M. Lei and T. Kaneko and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and M. Furuhashi and S. Tomohisa and S. Yamakawa},
  title = {Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830071,
  author = {Y. Ikeuchi and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and S.Ishikawa},
  title = {Characteristics of Fe/pGaN Contact upon Annealing Process},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100903979,
  author = {安重 英祐 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100780956,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830120,
  author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Sin-ichi Nishizawa and Hiromichi Ohashi},
  title = {Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100780948,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and N. Sawamoto and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film},
  booktitle = {Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)},
  year = 2016,
}

@inproceedings{CTT100802077,
  author = {米田 允俊 and 武田 さくら and 田口 宗孝 and 松田 博之 and 大橋匠 and 清水 淳一 and Artoni Kevin Roquero Ang and 橋本 由介 and 深見 駿 and 田中 一光 and 岡本 隆志 and 江波戸 達哉 and 大門 寛 and 若林整 and 木下 豊彦},
  title = {スパッタ法で作成されたMoS2薄膜のRHEEDと光電子分光による評価},
  booktitle = {表面科学学術講演会要旨集},
  year = 2016,
}