@inproceedings{CTT100800781,
  author = {Takahiro Gotow and Manabu Mitsuhara and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Improvement of GaAsSb MOS interface properties by using ultrathin InGaAs interfacial layers},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800782,
  author = {Shinichi Takagi and Daehwan Ahn and Munetaka Noguchi and Takahiro Gotow and Kouichi Nishi and Minsoo Kim and Mitsuru Takenaka},
  title = {Tunneling MOSFET technologies using III-V/Ge materials},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800780,
  author = {Takahiro Gotow and Manabu Mitsuhara and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Effects of impurity and composition profile steepness on electrical characteristics of GaAsSb/InGaAs heterojunction TFETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100803040,
  author = {後藤高寛 and 満原学 and 星拓也 and 杉山弘樹 and 竹中充 and 高木信一},
  title = {極薄InGaAs界面層を有するGaAsSb MOS界面特性の評価},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100803039,
  author = {後藤高寛 and 満原学 and 星拓也 and 杉山弘樹 and 竹中充 and 高木信一},
  title = {GaAsSb/InGaAs 縦型トンネルFETの動作実証},
  booktitle = {},
  year = 2016,
}