@article{CTT100765851,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition},
  journal = {MRS Advances},
  year = 2017,
}

@article{CTT100830080,
  author = {"Jun’ichi Shimizu" and "Takumi Ohashi" and "Kentaro Matsuura" and "Iriya Muneta" and "Kuniyuki Kakushima" and "Kazuo Tsutsui" and "Hitoshi Wakabayashi"},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2017,
}

@article{CTT100765848,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and H. Wakabayashi and A. Ogura},
  title = {Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process},
  journal = {Journal of Materials Research},
  year = 2017,
}

@article{CTT100765852,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor},
  journal = {MRS Advances},
  year = 2017,
}

@inproceedings{CTT100808048,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100788575,
  author = {N. Hayakawa and I. Muneta and T. Ohashi and K. Matsuura and J. Shimizu and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100780963,
  author = {S. Hirano and J. Shimizu and K. Matsuura and T. Ohashi and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100780961,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi},
  title = {Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100903978,
  author = {外山 真矢人 and 大橋 匠 and 松浦 賢太朗 and 清水 淳一 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903975,
  author = {早川直希 and 宗田伊理也 and 大橋匠 and 松浦賢太朗 and 清水淳一 and 角嶋邦之 and 筒井一生 and 若林整},
  title = {トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性},
  booktitle = {},
  year = 2017,
}