@article{CTT100786663,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Kotaro Natori and Takayuki Muro and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography},
  journal = {Nano Letters},
  year = 2017,
}

@article{CTT100830482,
  author = {"K. Kakushima" and "T. Seki" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai"},
  title = {Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates},
  journal = {Vacuum},
  year = 2017,
}

@article{CTT100765856,
  author = {Takumi Ohashi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness},
  journal = {Applied Physics Express},
  year = 2017,
}

@article{CTT100830080,
  author = {"Jun’ichi Shimizu" and "Takumi Ohashi" and "Kentaro Matsuura" and "Iriya Muneta" and "Kuniyuki Kakushima" and "Kazuo Tsutsui" and "Hitoshi Wakabayashi"},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2017,
}

@article{CTT100765851,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition},
  journal = {MRS Advances},
  year = 2017,
}

@article{CTT100765848,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and H. Wakabayashi and A. Ogura},
  title = {Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process},
  journal = {Journal of Materials Research},
  year = 2017,
}

@article{CTT100765852,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor},
  journal = {MRS Advances},
  year = 2017,
}

@inproceedings{CTT100786668,
  author = {Kotaro Natori and Tatsuhiro Ogawa and Takuya Hoshii and Tomohiro Matsushia and Takayuki Muro and Toyohiko Kinoshita and Yoshitada Morikawa and Kuniyuki Kakushima and Fumihiko Matsui and Kouichi Hayashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100809869,
  author = {筒井一生 and 角嶋邦之 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 若林整 and 宗田伊理也 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 更屋 拓哉 and 伊藤 一夫 and 福井 宗利 and 鈴木 慎一 and 小林 正治 and 高倉 俊彦 and 平本 俊郎 and 小椋 厚志 and 沼沢 陽一郎 and 大村 一郎 and 大橋 弘通 and 岩井洋},
  title = {三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)},
  booktitle = {電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan},
  year = 2017,
}

@inproceedings{CTT100830067,
  author = {Suguru Tatsunokuchi and Iriya Muneta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Photovoltaic Properties of Lateral Si Nano Wall Solar Cells},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100811306,
  author = {K. Tsutsui and K. Kakushima and T. Hoshii and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)},
  booktitle = {Proceedings of International Conference on ASIC},
  year = 2017,
}

@inproceedings{CTT100808048,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100786678,
  author = {Takuya Hoshii and Rumi Takayama and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100788575,
  author = {N. Hayakawa and I. Muneta and T. Ohashi and K. Matsuura and J. Shimizu and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830070,
  author = {K. Kakushima and Yuta Ikeuchi and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and T. Kikuchi and S. Ishikawa},
  title = {Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100780961,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi},
  title = {Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100780963,
  author = {S. Hirano and J. Shimizu and K. Matsuura and T. Ohashi and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100808047,
  author = {岡田 泰典 and 山口 晋平 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830069,
  author = {K. Kakushima and T. Suzuki and T. Hoshii and I. Muneta and H. Wakabayashi and HIROSHI IWAI and Y. Aoki,H. Nohira Aoki and KAZUO TSUTSUI},
  title = {Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903978,
  author = {外山 真矢人 and 大橋 匠 and 松浦 賢太朗 and 清水 淳一 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903975,
  author = {早川直希 and 宗田伊理也 and 大橋匠 and 松浦賢太朗 and 清水淳一 and 角嶋邦之 and 筒井一生 and 若林整},
  title = {トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903976,
  author = {龍口 傑 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 岩井 洋 and 角嶋 邦之},
  title = {横型Siナノウォール太陽電池の発電特性に関する検討},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903977,
  author = {篠原 健朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100801552,
  author = {Okada, Y. and Yamaguchi, S. and Ohashi, T. and Muneta, I. and Kasushima, K. and Tsutsui, K. and Hitoshi Wakabayashi},
  title = {Resistivity reduction of low-carrier-density sputtered-MoS2film using fluorine gas},
  booktitle = {17th International Workshop on Junction Technology, IWJT 2017},
  year = 2017,
}

@misc{CTT100801725,
  author = {Ohno, H. and Yamamoto, M. and Endoh, T. and Ando, Y. and Hanyu, T. and Itoh, K.M. and Tanaka, M. and Mitani, S. and Hitoshi Wakabayashi},
  title = {FOREWORD: Spintronics materials and devices for working memory technology},
  year = 2017,
}