@article{CTT100842577,
  author = {Manabu Mitsuhara and Takahiro Gotow and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates},
  journal = {Journal of Crystal Growth},
  year = 2020,
}

@article{CTT100830305,
  author = {Yasuyuki Miyamoto and Takahiro Gotow},
  title = {Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer},
  journal = {IEICE Transactions on Electronics},
  year = 2020,
}

@inproceedings{CTT100842580,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100842581,
  author = {青田 智也 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
  title = {N極性GaN HEMT構造での無電極PECエッチング},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822693,
  author = {毛利 匡裕 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
  title = {N極性GaN HEMT構造におけるコンタクト抵抗の低減},
  booktitle = {},
  year = 2020,
}