@article{CTT100855475,
  author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@misc{CTT100844604,
  author = {Jinhan Song},
  title = {A Study on Rare Earth Gate Dielectrics for SiC MOSFET},
  year = 2021,
}

@misc{CTT100844606,
  author = {Jinhan Song},
  title = {A Study on Rare Earth Gate Dielectrics for SiC MOSFET},
  year = 2021,
}

@misc{CTT100887659,
  author = {Jinhan Song},
  title = {A Study on Rare Earth Gate Dielectrics for SiC MOSFET},
  year = 2021,
}



@phdthesis{CTT100844604,
  author = {Jinhan Song},
  title = {A Study on Rare Earth Gate Dielectrics for SiC MOSFET},
  school = {東京工業大学},
  year = 2021,
}

@phdthesis{CTT100844606,
  author = {Jinhan Song},
  title = {A Study on Rare Earth Gate Dielectrics for SiC MOSFET},
  school = {東京工業大学},
  year = 2021,
}

@phdthesis{CTT100887659,
  author = {Jinhan Song},
  title = {A Study on Rare Earth Gate Dielectrics for SiC MOSFET},
  school = {東京工業大学},
  year = 2021,
}