@misc{CTT100900358, author = {大見俊一郎 and 長岡 克己 and 相澤 俊}, title = {積層体、積層体を含む電子源及び電子デバイス、並びに積層体の製法及び浄化方法}, howpublished = {公開特許}, year = 2023, month = {}, note = {特願2021-154427(2021/09/22), 特開2023-045834(2023/04/03)} } @misc{CTT100886514, author = {大見俊一郎}, title = {半導体装置および浮遊ゲートデバイスの製造方法}, howpublished = {公開特許}, year = 2022, month = {}, note = {特願2021-082485(2021/05/14), 特開2022-175792(2022/11/25)} } @misc{CTT100884606, author = {大見俊一郎}, title = {半導体装置および浮遊ゲートデバイスの製造方法}, howpublished = {公開特許}, year = 2022, month = {}, note = {特願2021-028111(2021/02/25), 特開2022-129448(2022/09/06)} } @misc{CTT100845882, author = {大見俊一郎}, title = {トランジスタおよび不揮発性メモリ}, howpublished = {登録特許}, year = 2023, month = {}, note = {特願2019-122028(2019/06/28), 特開2021-009893(2021/01/28), 特許第7357901号(2023/09/29)} }