@article{CTT100855460,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100905140,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)]},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100855475,
  author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855459,
  author = {S-L. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and T-K. Chung and E. Chang and K. Kakushima},
  title = {Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100855476,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {A possible origin of the large leakage current in ferroelectric Al1-xScxN films},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855472,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation},
  journal = {Applied Physics Express (APEX)},
  year = 2021,
}

@inproceedings{CTT100877152,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877154,
  author = {Kazuto Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877156,
  author = {Sho Sasaki and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Observation of ferroelectricity in atomic layer deposited AlN film},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877155,
  author = {R. Shibukawa and S. -L. Tsai and T. Hoshii and H. Wakbayashi and K. Tsutsui and K. Kakushima},
  title = {Thermal stability of ferroelectric AlScN films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877153,
  author = {Mitsuki Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875829,
  author = {小森 勇太 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875832,
  author = {小森 勇太 and 木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}

@inproceedings{CTT100848916,
  author = {竹内走一郎 and 古賀峻丞 and 田中晶貴 and 孫澤旭 and 橋本由介 and 星井拓也 and 筒井一生 and 松下智裕},
  title = {AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100848915,
  author = {筒井一生 and 濱田拓也 and 高山 研 and 金 相佑 and 星井拓也 and 角嶋邦之 and 若林 整 and 高橋言緒 and 井手利英 and 清水三聡},
  title = {選択成長法を用いたGaN 系FinFET},
  booktitle = {},
  year = 2021,
}

@misc{CTT100894462,
  author = {星井拓也 and 筒井一生},
  title = {ｐチャネルＧａＮＭＯＳデバイス及びその製造方法},
  howpublished = {公開特許},
  year = 2023,
  month  = {},
  note   = {特願2021-137005(2021/08/25), 特開2023-031488(2023/03/09)}
}