@article{CTT100875613,
  author = {Takuya Hamada and Masaya Hamada and Satoshi Igarashi and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855464,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855471,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855467,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@inproceedings{CTT100877147,
  author = {Takuya Hamada and Taiga Horiguchi and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877149,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Nobuyuki Ikarashi and Hitoshi Wakabayashi},
  title = {Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}