@article{CTT100865318,
  author = {Shusaku Shoji and Sani Bin Mohd Najib Abdillah and Min-Wen Yu and Tomokazu Yamamoto and Sou Yasuhara and Akira Yamaguchi and Xiaobo Peng and matsumura Sho and Satoshi Ishii and Yohei Cho and Takeshi Fujita and Shigenori Ueda and Chen Kuo-ping and Hideki Abe and Masahiro Miyauchi},
  title = {Charge partitioning by intertwined metal-oxide nano-architectual networks for the photocatalytic dry reforming of  methane},
  journal = {Chem Catalysis},
  year = 2021,
}

@article{CTT100865416,
  author = {Yang Shin Liu and Akira Yamaguchi and Yue Yang and Hideki Abe and Shigenori Ueda and Toyokazu Tanabe and Masahiro Miyauchi},
  title = {Visible light induced CO2 reduction by mixed-valence tin oxide},
  journal = {ACS appl. Energy Mater.},
  year = 2021,
}

@article{CTT100863528,
  author = {Yu-Shien Shiah and Kihyung Sim and Yuhao Shi and Katsumi Abe and Shigenori Ueda  and Masato Sasase and Junghwan Kim  and Hideo Hosono},
  title = {Mobility–stability trade-off in oxide thin-film  transistors},
  journal = {Nature Electronics},
  year = 2021,
}

@article{CTT100866840,
  author = {Masatoshi Kimura and Xinyi He and Takayoshi Katase* and Terumasa Tadano and Jan M. Tomczak and Makoto Minohara and Ryotaro Aso and Hideto Yoshida and Keisuke Ide and Shigenori Ueda and Hidenori Hiramatsu and Hiroshi Kumigashira and Hideo Hosono and Toshio Kamiya},
  title = {Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure},
  journal = {Nano letters},
  year = 2021,
}

@article{CTT100863529,
  author = {Yu-Shien Shiah and Kihyung Sim and Shigenori Ueda and Junghwan Kim and Hideo Hosono},
  title = {Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs},
  journal = {IEEE Electron Device Letters},
  year = 2021,
}

@article{CTT100852809,
  author = {Cheol Hee Choi and Taikyu Kim and Shigenori Ueda and Yu-Shien Shiah and Hideo Hosono and Junghwan Kim and Jae Kyeong Jeong},
  title = {High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film},
  journal = {ACS Applied Materials and Interfaces},
  year = 2021,
}

@article{CTT100862166,
  author = {Akira Saitoh and Katsuki Hayashi and Kota Hanzawa and Shigenori Ueda and Shiro Kawachi and Jun-ichi Yamaura and Keisuke Ide and Junghwan Kim and Gregory Tricot and Satoru Matsuishi and Kazuki Mitsui and Tatsuki Shimizu and Masami Mori and Hideo Hosono and Hidenori Hiramatsu},
  title = {Origins of the coloration from structure and valence state of bismuth oxide glasses},
  journal = {J. NON-CRYST. SOLIDS.},
  year = 2021,
}

@inproceedings{CTT100866819,
  author = {Masatoshi Kimura and Xinyi He and Takayoshi Katase and Terumasa Tadano and Jan M. Tomczak and Makoto Minohara and Ryotaro Aso and Hideto Yoshida and Keisuke Ide and Shigenori Ueda and Hidenori Hiramatsu and Hiroshi Kumigashira and Hideo Hosono and Toshio Kamiya},
  title = {Appearance and large enhancement of phonon drag thermopower by epitaxial strain and phonon leaking from LaAlO3 in LaNiO3},
  booktitle = {},
  year = 2021,
}