@article{CTT100845762,
  author = {T. Aota and A. Hayasaka and I. Makabe and S. Yoshida and T. Gotow and Y. Miyamoto},
  title = {Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@inproceedings{CTT100875023,
  author = {Tomimasa Go and M. Kitamura and T. Gotow and Y. Miyamoto},
  title = {PMA Evaluation of TiN ALD in InGaAs Nanosheet MOSFETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875020,
  author = {T. Gotow and Tatsushi Suka and Y. Miyamoto},
  title = {Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100880231,
  author = {後藤高寛 and 須賀達士 and 宮本恭幸},
  title = {N極性およびGa極性GaN MIS構造の界面特性の比較検討},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875017,
  author = {Y. Miyamoto and T. Gotow},
  title = {Proposal of breakdown voltage control of GaN HEMT by interface charge},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100845767,
  author = {宮本恭幸 and 後藤高寛},
  title = {界面電荷量によるGaN HEMTの耐圧制御の提案},
  booktitle = {},
  year = 2021,
}