@article{CTT100882735,
  author = {S. Nishiyama and K. Kato and M. Kobayashi and R. Mizokuchi and T. Mori and T. Kodera},
  title = {The functions of a reservoir ofset voltage applied to physically defned p channel Si quantum dots},
  journal = {Sci. Rep.},
  year = 2022,
}

@inproceedings{CTT100880941,
  author = {吉川 拓弥 and 鈴木 優作 and Ibad Sayyid and 西山 伸平 and 加藤 公彦 and 柳 永勛 and 村上 重則 and 森 貴洋 and 溝口 来成 and 米田 淳 and 小寺 哲夫},
  title = {物理形成量子ドット中のシリコン正孔スピンの時間制御操作と 動作 温度の向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100890884,
  author = {C. Wen and H. Takahashi and S. I. Ibad and S. Nishiyama and K. Kato and Y. Liu and S. Murakami and T. Mori and R. Mizokuchi and J. Yoneda and T. Kodera},
  title = {Long-term characteristic stabilization of a semiconductor double quantum dot based on a multi-dimensional gradient descent technique},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100890883,
  author = {S. Nishiyama and K. Kato and Y. Liu and R. Mizokuchi and J. Yoneda and T. Kodera and T. Mori},
  title = {Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing negative-tone resist,},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100867319,
  author = {S. I. Ibad and H. Takahashi and S. Nishiyama and K. Kato and Y. Liu and S. Murakami and T. Mori and R. Mizokuchi and J. Yoneda and T. Kodera},
  title = {Stabilizing method of a double quantum dot towards long-term and stable spin-qubit operation},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100877640,
  author = {S. I. Ibad and H. Takahashi and S. Nishiyama and K. Kato and Y. Liu and S. Murakami and T. Mori and R. Mizokuchi and J. Yoneda and T. Kodera},
  title = {Stabilizing method of a double quantum dot towards long-term spin-qubit operation},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100877635,
  author = {Raisei Mizokuchi and Shimpei Nishiyama and 加藤 公彦 and 柳 永勛 and 村上 重則 and 森 貴洋 and Jun Yoneda and Tetsuo Kodera},
  title = {Sensitivity characteristics of RF charge sensors based on p-type silicon quantum dots},
  booktitle = {},
  year = 2022,
}