@misc{CTT100884604,
  author = {大見俊一郎},
  title = {強誘電性薄膜の形成方法、それを備える半導体装置},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {PCT/JP2022/006613(2022/02/18), WO 2022/190817(2022/09/15)}
}


@misc{CTT100886514,
  author = {大見俊一郎},
  title = {半導体装置および浮遊ゲートデバイスの製造方法},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {特願2021-082485(2021/05/14), 特開2022-175792(2022/11/25)}
}


@misc{CTT100884606,
  author = {大見俊一郎},
  title = {半導体装置および浮遊ゲートデバイスの製造方法},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {特願2021-028111(2021/02/25), 特開2022-129448(2022/09/06)}
}


@misc{CTT100880502,
  author = {大見俊一郎},
  title = {半導体装置},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {特願2020-158828(2020/09/23), 特開2022-052432(2022/04/04)}
}