@article{CTT100896543,
  author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung-Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2022,
}

@article{CTT100882668,
  author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure},
  journal = {Scientific Reports},
  year = 2022,
}

@article{CTT100881315,
  author = {Taiga Horiguchi and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100883067,
  author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874628,
  author = {M. Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and Yoshiaki Daigo and Ichiro Mizushima and T. Yoda and K. Kakushima},
  title = {Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874956,
  author = {Hei Wong and Kuniyuki KAKUSHIMA},
  title = {On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node},
  journal = {Nanomaterials},
  year = 2022,
}

@article{CTT100875619,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100883068,
  author = {Ryota Shibukawa and Sung Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100880933,
  author = {Atsuki Miyata and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875615,
  author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
  title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875614,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875617,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Emi Kano and Nobuyuki Ikarashi and Hitoshi Wakabayash},
  title = {Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875618,
  author = {Takuya Hamada and Masaya Hamada and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@inproceedings{CTT100904701,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kuniyuki Kakushima and Hiroshi Funakubo},
  title = {Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100905149,
  author = {Shonosuke Kimura and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896548,
  author = {小野 凌 and 今井 慎也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896547,
  author = {今井 慎也 and 小野 凌 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
  title = {MoS2膜質のスパッタ成膜レート依存性調査},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100879798,
  author = {宗田 伊理也 and 白倉 孝典 and ファム ナムハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896546,
  author = {水谷 一翔 and 星井 拓也 and 川那子 高暢 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901287,
  author = {安岡慎之介 and 大田怜佳 and 岡本一輝 and 石濱圭佑 and 清水荘雄 and 角嶋邦之 and 上原雅人 and 山田浩志 and 秋山守人 and 小金澤智之 and L. S. R. Kumara and Okkyun Seo and 坂田修身 and 舟窪浩},
  title = {メモリ応用に向けた(Al, Sc)N膜の薄膜化の検討},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896550,
  author = {立松 真一 and 濱田 昌也 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アニール処理によるWS2-Niエッジコンタクト特性の向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896549,
  author = {川那子 高暢 and 梶川 亮介 and 水谷 一翔 and Tsai Sung Lin and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100881317,
  author = {宗田 伊理也 and 白倉 孝典 and PHAM NAM HAI and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Ferromagnetism and current control of magnetoresistance  in two-dimensional polycrystalline MoS2},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875814,
  author = {阿野 響太郎 and 星井 拓也 and 若林 整 and 筒井 一生 and 依田 孝 and 角嶋 邦之},
  title = {ゲート付きSiC pnダイオードの電気特性評価},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100867380,
  author = {宗田 伊理也 and 白倉 孝典 and ファム ナム ハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調},
  booktitle = {},
  year = 2022,
}