Gated Four-Probe Method for Evaluation of Electrical Characteristics in MoS2 Field-Effect Transistors

Publication Information

Title

Japanese:
English:	Gated Four-Probe Method for Evaluation of Electrical Characteristics in MoS2 Field-Effect Transistors

Author

Japanese:	大場智昭, 川那子高暢, 小田俊理.
English:	Tomoaki Oba, Takamasa Kawanago, Shunri Oda.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 22, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The 10th annual Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR2018)

Conference site

Japanese:
English:	Guilin

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