論文

• Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Sougmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Carrier generation and compensation mechanism in La2SnO2S3, J. Mater. Chem. C, Vol. 12, pp. 12015, July 2024.

国際会議発表 (査読有り)

• Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Elucidation of Carrier Generation and Compensation Mechanism in La2SnO2S3, The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA2024), Oct. 2024.
• Y. Mochizuki, H.-J. Sung, T. Gake, F. Oba. Chemical Trends of Surface Reconstruction and Band Alignment for Nonmetallic ABO3 from First Principles, The 14th International Conference on the Science and Technology for Advanced Ceramics (STAC-14), Oct. 2024.
• eruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Point Defects and Self-Trapped Electrons in La2SnO2S3, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.

国際会議発表 (査読なし・不明)

• Teruya Nagafuji, Tomoya Gake, Soungmin Bae, Akira Takahashi, Fumiyasu Oba. Clarification of point defect formation in La2SnO2S3 by first-principles calculations, STAC-D2MatE 2024, Feb. 2024.

国内会議発表 (査読なし・不明)

• 長藤瑛哉, 我毛智哉, 裵星旻, 高橋亮, 大場史康. La2SnO2S3における点欠陥及び自己束縛電子に関する第一原理計算, 日本金属学会2024年春期(第174回)講演大会, Mar. 2024.
• 長藤瑛哉, 我毛智哉, 裵星旻, 高橋亮, 大場史康. 層状オキシサルファイドLa2SnO2S3における点欠陥・キャリア生成に関する第一原理計算, 第62回セラミックス基礎科学討論会, Jan. 2024.

特許など

• 大場史康, 平松秀典, 我毛智哉, 半沢幸太. ４元系酸カルコゲン化物および電子素子. 特許. 公開. 国立大学法人東京工業大学. 2022/12/22. 特願2022-205476. 2024/07/05. 特開2024-091629. 2024.

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