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Publication List - Kozo Makiyama (14 entries)
Journal Paper
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J. Kotani,
K. Makiyama,
T. Ohki,
S. Ozaki,
N. Okamoto,
Y. Minoura,
M. Sato,
N. Nakamura,
Y. Miyamoto.
High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers,
ELECTRON. LETT.,
vol. 59,
no. 4,
e12715,
Feb. 2023.
International Conference (Reviewed)
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K. Makiyama,
S. Yoshida,
K. Nakata,
Y. Miyamoto.
Innovative RF Device Technologies for Advanced Information and Communications Network Society,
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium,
Oct. 2022.
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K. Makiyama,
T. Ohki,
S. Ozaki,
Y. Niida,
N. Okamoto,
Y. Minoura,
M. Sato,
Y. Kamada,
T. Ishiguro,
K. Joshin,
N. Nakamura,
Y. Miyamoto.
InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited),
International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017 ),
30-Nitride-3,
Sept. 2017.
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K. Makiyama,
S. Ozaki,
Y. Niida,
T. Ohki,
N. Okamoto,
Y. Minoura,
M. Sato,
Yoichi Kamada,
K. Joshin,
N. Nakamura,
Yasuyuki Miyamoto.
Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited),
12th International Conference on Nitride Semiconductor (ICNS),
C1,1,
July 2017.
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K. Makiyama,
Y. Niida,
S. Ozaki,
T. Ohki,
N. Okamoto,
Y. Minoura,
M. Sato,
Y. Kamada,
K. Joshin,
K. Watanabe,
Y. Miyamoto.
GaN HEMT Device Technology for W-band Power Amplifiers (Invited),
Compound Semiconductor Week 2017,
A6-1,
May 2017.
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K. Makiyama,
Y. Niida,
S. Ozaki,
T. Ohki,
N. Okamoto,
Y. Minoura,
M. Sato,
Y. Kamada,
K. Joshin,
K. Watanabe,
Y. Miyamoto.
High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited),
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),
Oct. 2016.
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K. Makiyama,
S. Ozaki,
T. Ohki,
N. Okamoto,
Y. Minoura,
Y. Niida,
Y. Kamada,
M. Sato,
K. Joshin,
K. Watanabe,
Y. Miyamoto.
High-Performance GaN-HEMT Technology for W-band Amplifier (Invited),
URSI AP-RASC 2016,
Aug. 2016.
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K. Makiyama,
S. Ozaki,
Y. Niida,
T. Ohki,
N. Okamoto,
Y. Minoura,
M. Sato,
Y. Kamada,
K. Joshin,
K. Watanabe,
Y. Miyamoto.
InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited),
2016 Lester Eastman Conference (LEC),
pp. 31-34,
Aug. 2016.
Official location
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K. Makiyama,
S. Ozaki,
T. Ohki,
N. Okamoto,
Y. Minoura,
Y. Niida,
Y. Kamada,
K. Joshin,
K. Watanabe,
Y. Miyamoto.
Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz,
2015 IEEE International Electron Devices Meeting (IEDM),
Dec. 2015.
Domestic Conference (Reviewed)
Degree
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ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築,
Exam Summary,
博士(工学),
Tokyo Institute of Technology,
2016/09/20,
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ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築,
Thesis,
博士(工学),
Tokyo Institute of Technology,
2016/09/20,
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ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築,
Outline,
博士(工学),
Tokyo Institute of Technology,
2016/09/20,
-
ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築,
Summary,
博士(工学),
Tokyo Institute of Technology,
2016/09/20,
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