論文

• An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima. Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer, Japanese Journal of Applied Physics, IOP Publishing, Vol. 64, Mar. 2025.  公式リンク  
  
• An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma, Japanese Journal of Applied Physics, Vol. 63, No. 6, 066503, June 2024.  公式リンク  
  

学位論文

• A Study on Gate Dielectric Process for SiC MOS Structure with High Reliability,  Thesis,  Institute of Science Tokyo, 
• A Study on Gate Dielectric Process for SiC MOS Structure with High Reliability,  Summary,  Institute of Science Tokyo, 

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