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悪七泰樹 研究業績一覧 (27件)
論文
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T. Akushichi,
Y. Takamura,
Y. Shiotsu,
S. Yamamoto,
S. Sugahara.
Spin Injection Behavior of CoFe/MgO/Si Tunnel Contacts: Effects of Radical Oxygen Annealing,
J. Electron. Mater.,
vol. 52,
pp. 6902-6910,
Aug. 2023.
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T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing,
J. Appl. Phys.,
AIP Publishing LLC,
Vol. 117,
No. 17,
pp. 17B531/1-4,
May 2015.
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Y. Takamura,
T. Akushichi,
Y. Shuto,
S. Sugahara.
Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration,
J. Appl. Phys.,
AIP Publishing LLC,
Vol. 117,
No. 17,
pp. 17D919/1-4,
Apr. 2015.
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Y. Kawame,
T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact,
J. Appl. Phys.,
AIP Publishing LLC,
Vol. 117,
No. 17,
pp. 17D151/1-3,
Apr. 2015.
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Y. Takamura,
T. Akushichi,
A. Sadono,
T. Okishio,
Y. Shuto,
S. Sugahara.
Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices,
J. Appl. Phys.,
AIP Publishing LLC.,
vol. 115,
no. 17,
pp. 17C307/1-3,
Apr. 2014.
国際会議発表 (査読有り)
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T. Akushichi,
D. Kitagata,
Y. Shuto,
S. Sugahara.
Analysis of Spin Accumulation in a Si Channel Using CoFe/MgO/Si Spin Injectors,
Electron Device Technology and Manufacturing Conference,
P-15,
Feb. 2017.
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D. Kitagata,
T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices,
2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016),
P2-23,
pp. 200-201,
June 2016.
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T. Akushichi,
D. Kitagata,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors,
2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016),
P1-27,
June 2016.
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D. Kitagata,
T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices,
2015 IEEE Silicon Nanoelectronics Workshop (SNW2015),
June 2015.
公式リンク
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Y. Takamura,
T. Akushichi,
Y. Shuto,
S. Sugahara.
Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration,
59th Annual Magnetism & Magnetic Materials Conference,
GS-07,
Nov. 2014.
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Y. Kawame,
Y. Shuto,
K. Takahashi,
T. Akushichi,
Y. Takamura,
S. Sugahara.
Fabrication of a CoFe/TiO2/Si tunnel contact and its spin-injector application,
59th Annual Magnetism & Magnetic Materials Conference,
FW-15,
Nov. 2014.
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Y. Kawame,
T. Akushichi,
Y. Shuto,
Y. Takamura,
S. Sugahara.
Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5 /MgO/Si tunnel contact,
59th Annual Magnetism & Magnetic Materials Conference,
AH-09,
Nov. 2014.
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T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with the high quality tunnel barriers prepared by radical-oxygen annealing,
59th Annual Magnetism & Magnetic Materials Conference,
FW-11,
Nov. 2014.
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Y. Takamura,
A. Sadono,
T. Akushichi,
T. Okishio,
Y. Shuto,
S. Sugahara.
Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices,
The 58th Annual Magnetism and Magnetic Materials (MMM) Conference,
AX-05,
Nov. 2013.
国内会議発表 (査読なし・不明)
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清野稔仁,
悪七泰樹,
菅原聡.
CoFe/HfO2/Siスピン注入源の作製と評価,
第64回応用物理学会春季学術講演会,
16a-501-11,
Mar. 2017.
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北形大樹,
悪七泰樹,
菅原聡.
電界アシスト4端子非局所MOSデバイスの解析と設計,
第21回スピン工学の基礎と応用 (PASPS-21),
E-3,
Dec. 2016.
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清野稔仁,
悪七泰樹,
菅原聡.
CoFe/Hf系酸化物/Siスピン注入源の作製と評価,
第21回スピン工学の基礎と応用 (PASPS-21),
P-12,
Dec. 2016.
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周藤悠介,
高橋克典,
悪七泰樹,
髙村陽太,
菅原聡.
CoFe/TIO2/Siスピン注入源の作製と評価,
第 19 回半導体スピン工学の基礎と応用 PASPS-19,
P-18,
Dec. 2014.
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悪七泰樹,
髙村陽太,
周藤悠介,
菅原聡.
高品質CoFe/MgO/SiおよびCoFe/AlOx/Siトンネルコンタクトを用いた Siチャネルへのスピン注入,
第 19 回半導体スピン工学の基礎と応用 PASPS-19,
O-5,
Dec. 2014.
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髙村陽太,
悪七泰樹,
周藤悠介,
菅原聡.
電界誘起によるスピン伝導の加速を用いた非局所スピンデバイス,
第 19 回半導体スピン工学の基礎と応用 PASPS-19,
O-6,
Dec. 2014.
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悪七泰樹,
髙村陽太,
周藤悠介,
菅原聡.
スピン蓄積デバイスにおける Hanle 効果の解析,
第 19 回半導体スピン工学の基礎と応用 PASPS-19,
P-19,
Dec. 2014.
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川目悠,
悪七泰樹,
髙村陽太,
周藤悠介,
菅原聡.
(100)配向したCo2FeSi0.5Al0.5/MgO/Siトンネル接合の作製とそのスピン注入源応用,
第 19 回半導体スピン工学の基礎と応用 PASPS-19,
P-20,
Dec. 2014.
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高村陽太,
悪七泰樹,
周藤悠介,
菅原聡.
3端子スピン蓄積デバイスにおけるHanle効果信号の解析,
第38回 日本磁気学会学術講演会,
第38回 日本磁気学会学術講演会,
4aD-1,
Sept. 2014.
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高橋克典,
悪七泰樹,
周藤悠介,
高村陽太,
菅原聡.
CoFe/TiO2/Siトンネルコンタクトの作製とそのスピン注入源への応用,
第38回 日本磁気学会学術講演会,
4aD-4,
Sept. 2014.
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川目悠,
悪七泰樹,
周藤悠介,
高村陽太,
菅原聡.
B2型Co2FeSi0.5Al0.5/MgO/Siスピン注入源の作製と評価,
第38回 日本磁気学会学術講演会,
4aD-3,
Sept. 2014.
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悪七泰樹,
高村陽太,
周藤悠介,
菅原聡.
ラジカル酸素アニールによる高品質トンネル障壁を有するCoFe/MgO/SiおよびCoFe/AlOx/Siコンタクトを用いたスピン蓄積の評価,
第38回 日本磁気学会学術講演会,
4aD-2,
Sept. 2014.
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Y. Takamura,
A. Sadono,
T. Akushichi,
T. Okishio,
Y. Shuto,
S. Sugahara.
Analysis of Hanle-effect signals observed in a Si-channel spin accumulation device with a high-quality CoFe/MgO/Si spin injector,
The 61st JSAP Spring Meeting, 2014,
Mar. 2014.
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