論文

• S. Akasaka, A. Tsukazaki, K. Nakahara, A. Ohtomo, M. Kawasaki. Improvement of electron mobility above 100,000cm² V^-1s^-1 in Mg_xZn_1-xO/ZnO heterostructures, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 50, 080215-1-3, Aug. 2011.  公式リンク  
  
• S. Akasaka, K. Nakahara, H. Yuji, A. Tsukazaki, A. Ohtomo, M. Kawasaki. Preparation of an epitaxy-ready surface of a ZnO(0001) substrate, Applied Physics Express, The Japan Society of Applied Physics, Vol. 4, No. 3, 035701-1-3, Mar. 2011.  公式リンク  
  
• A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A. Ohtomo, M. Kawasaki. Observation of the fractional quantum Hall effect in an oxide, Nature Materials, Nature Publishing Group, Vol. 9, No. 11, pp. 889-893, Oct. 2010.  公式リンク  
  
• K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki. Nitrogen doped Mg_xZn_1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates, Applied Physics Letters, American Institute of Physics, Vol. 97, No. 1, 013501-1-3, July 2010.  公式リンク  
  
• H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, Y. Nishimoto, D. Takamizu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki. Optimization of the growth conditions for molecular beam epitaxy of Mg_xZn_1-xO (0 <= x <= 0.12) films on Zn-polar ZnO substrates, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 49, No. 7, 071104-1-5, July 2010.  公式リンク  
  
• S. Akasaka, K. Nakahara, A. Tsukazaki, A. Ohtomo, M. Kawasaki. Mg_xZn_1-xO films with a low residual donor concentration (< 10¹⁵ cm^-3) grown by molecular beam epitaxy, Applied Physics Express, The Japan Society of Applied Physics, Vol. 3, No. 7, 071101-1-3, July 2010.  公式リンク  
  
• M. Nakano, A. Tsukazaki, A. Ohtomo, K. Ueno, S. Akasaka, H. Yuji, K. Nakahara, T. Fukumura, M. Kawasaki. Electronic-field control of two-dimensional electrons in polymer-gated-oxide semiconductor heterostructures, Advanced Materials, Vol. 22, No. 8, pp. 876-879, Feb. 2010.  公式リンク  
  
• A. Tsukazaki, A. Ohtomo, M. Kawasaki, S. Akasaka, H. Yuji, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, T. Gokmen, J. Shabani, M. Shayegan. Spin susceptibility and effective mass of two-dimensional electrons in Mg_xZn_1-xO/ZnO heterostructures, Physical Review B, Vol. 78, No. 23, 233308-1-4, Dec. 2008.  公式リンク  
  
• M. Nakano, T. Makino, A. Tsukazaki, K. Ueno, A. Ohtomo, T. Fukumura, H. Yuji, Y. Nishimoto, S. Akasaka, D. Takamizu, K. Nakahara, T. Tanabe, A. Kamisawa, M. Kawasaki. Mg_xZn_1-xO-based Schottky photodiode for highly color-selective ultraviolet light detection, Applied Physics Express, Vol. 1, No. 12, 121201-1-3, Dec. 2008.  公式リンク  
  
• M. Nakano, T. Makino, A. Tsukazaki, K. Ueno, A. Ohtomo, T. Fukumura, H. Yuji, S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, M. Kawasaki. Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO, Applied Physics Letters, Vol. 93, No. 12, 123309-1-3, Sept. 2008.  公式リンク  
  
• Y. Nishimoto, K. Nakahara, D. Takamizu, A. Sasaki, K. Tamura, S. Akasaka, H. Yuji, T. Fujii, T. Tanabe, H. Takasu, A. Tsukazaki, A. Ohtomo, T. Onuma, S. F. Chichibu, M. Kawasaki. Plasma-assisted molecular beam epitaxy of high optical quality MgZnO films on Zn-polar ZnO substrates, Applied Physics Express, Vol. 1, No. 9, 091202-1-3, Aug. 2008.  公式リンク  
  
• A. Tsukazaki, H. Yuji, S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, H. Takasu, A. Ohtomo, M. Kawasaki. High electron mobility exceeding 10⁴ cm²V^-1s^-1 in Mg_xZn_1-xO/ZnO single heterostructures grown by molecular beam epitaxy, Applied Physics Express, Vol. 1, No. 5, 055004-1-3, May 2008.  公式リンク  
  

国際会議発表 (査読有り)

• H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, A. Sasaki, T. Tanabe, H. Takasu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki. Mg_xZn_1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy, Proceedings of SPIE (Zinc Oxide Materials and Devices III, edited by F. H. Teherani and C. W. Litton), vol. 6895, p. 68950D, Feb. 2008.

国際会議発表 (査読なし・不明)

• A. Tsukazaki, S. Akasaka, K. Nakahara, A. Kamisawa, Y. Ohno, H. Ohno, A. Ohtomo, M. Kawasaki. Fractional quantum Hall effect in MgZnO/ZnO heterostructures, The 2010 WPI-AIMR Annual Workshop, Mar. 2010.
• A. Tsukazaki, A. Ohtomo, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, M. Kawasaki. The fractional quantum Hall effect in MgZnO/ZnO based haterostructures, 16th International Workshop on Oxide Electronics, Oct. 2009.
• A. Tsukazaki, M. Nakano, S. Akasaka, K. Nakahara, A. Kamisawa, A. Ohtomo, M. Kawasaki. Transistor operation at MgZnO/ZnO interface by Schottky gating with conducting polymer, The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), July 2009.
• A. Tsukazaki, M. Nakano, S. Akasaka, K. Nakahara, A. Kamisawa, A. Ohtomo, M. Kawasaki. Electric-field control of two dimensional transport at MgZnO/ZnO interfaces by conducting polymer Schottky gate, MRS 2009 Spring Meeting, Apr. 2009.

国内会議発表 (査読なし・不明)

• 塚崎 敦, 赤坂 俊輔, 中原 健, 神澤 公, 大野 裕三, 大野 英男, 大友 明, 川崎雅司. 2DEG移動度100,000 cm²V^-1s^-1を越えるMgZnO/ZnO界面の実現, 2009年秋季第70回応用物理学会学術講演会, Sept. 2009.
• 牧野 哲征, 瀬川 勇三朗, 塚崎 敦, 大友 明, 沈 睿, 嶽山 正二郎, 赤坂 俊輔, 中原 健, 川崎 雅司. ZnO単一ヘテロ構造における磁気発光特性, 日本物理学会2009年年次・秋季大会, Sept. 2009.
• A. Ohtomo, A. Tsukazaki, T. Kita, Y. Ohno, H. Ohno, K. Nakahara, H. Yuji, K. Tamura, S. Akasaka, H. Takasu, M. Kawasaki. Quantum Hall effect in ZnO, WPI & IFCAM Joint Workshop "Challenge of Interdisciplinary Materials Science to Technological Innovation of the 21st Century", Feb. 2008.

その他の論文・著書など

• 塚崎 敦, 中野 匡規, 大友 明, 上野 和紀, 赤坂 俊輔, 湯地 洋行, 中原 健, 福村 知昭, 川崎 雅司. 酸化亜鉛系分極不整合界面の2次元伝導と導電性高分子を用いた伝導性制御, まてりあ, Vol. 49, No. 7, pp. 312, July 2010.

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