国際会議発表 (査読有り)

• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices, IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), pp. 217-219, Apr. 2021.

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