論文

• Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Sougmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Carrier generation and compensation mechanism in La2SnO2S3, J. Mater. Chem. C, Vol. 12, pp. 12015, July 2024.
• Takanori Ishii, Akira Takahashi, Teruya Nagafuji, Fumiyasu Oba. Oxygen vacancies in α-(AlxGa1−x)2O3 alloys: a first-principles study, Applied Physics Express, vol. 16, pp. 061002, June 2023.

国際会議発表 (査読有り)

• Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Elucidation of Carrier Generation and Compensation Mechanism in La2SnO2S3, The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA2024), Oct. 2024.
• eruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Point Defects and Self-Trapped Electrons in La2SnO2S3, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.

国際会議発表 (査読なし・不明)

• Teruya Nagafuji, Tomoya Gake, Soungmin Bae, Akira Takahashi, Fumiyasu Oba. Clarification of point defect formation in La2SnO2S3 by first-principles calculations, STAC-D2MatE 2024, Feb. 2024.
• Takanori Ishii, Akira Takahashi, Teruya Nagafuji, Fumiyasu Oba. Systematic computational analysis of oxygen vacancies in α-(AlxGa1-x)2O3 alloys, STAC-D2MatE 2024, Feb. 2024.
• Teruya Nagafuji, Tomoya Gake, Akira Takahashi, Soungmin Bae, Fumiyasu Oba. Defect formation and carrier compensation in La2SnO2S3: a first-principles study, MRM2023/IUMRS-ICA2023, Dec. 2023.
• Takanori Ishii, Akira Takahashi, Teruya Nagafuji, Fumiyasu Oba. Systematic analysis of oxygen vacancies in α-(AlxGa1-x )2O3 alloys using first-principles calculations, MRM2023/IUMRS-ICA2023, Dec. 2023.
• Teruya Nagafuji, Tomoya Gake, Soungmin Bae, Akira Takahashi, Fumiyasu Oba. First-principles study of point defect formation in La2SnO2S3, The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture, Oct. 2023.
• Takanori Ishii, Akira Takahashi, Teruya Nagafuji, Fumiyasu Oba. First-principles calculations of oxygen vacancies in α-(AlxGa1-x )2O3, The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture, Oct. 2023.

国内会議発表 (査読なし・不明)

• 長藤瑛哉, 我毛智哉, 裵星旻, 高橋亮, 大場史康. La2SnO2S3における点欠陥及び自己束縛電子に関する第一原理計算, 日本金属学会2024年春期(第174回)講演大会, Mar. 2024.
• 長藤瑛哉, 我毛智哉, 裵星旻, 高橋亮, 大場史康. 層状オキシサルファイドLa2SnO2S3における点欠陥・キャリア生成に関する第一原理計算, 第62回セラミックス基礎科学討論会, Jan. 2024.
• 長藤瑛哉, 我毛智哉, 裵星旻, 高橋亮, 大場史康. 第一原理計算を用いたLa2SnO2S3におけるキャリア生成・補償機構の解明, 第43回電子材料研究討論会, Nov. 2023.
• 石井孝憲, 高橋 亮, 長藤瑛哉, 大場史康. 第一原理計算によるα-(AlxGa1-x )2O3固溶体の酸素空孔の系統的解析, 第43回電子材料研究討論会, Nov. 2023.
• 石井孝憲, 高橋亮, 長藤瑛哉, 大場史康. α-(AlxGa1-x)2O3固溶体の電子状態の第一原理計算, 日本セラミックス協会2023年年会, Mar. 2023.
• 石井孝憲, 高橋亮, 長藤瑛哉, 大場史康. 第一原理計算によるα-(AlxGa1-x)2O3固溶体の電子状態の系統的解析, 日本金属学会2023年春期(第172回)講演大会, Mar. 2023.

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