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吉野淳二 2000年 研究業績一覧 (5件 / 68件)
論文
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Y. Satoh,
D. Okazawa,
A. Nagashima,
J. Yoshino.
Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs,
Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai,
pp. 33-34,
2000.
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D. Okazawa,
K. Yamamoto,
A. Nagashima,
J. Yoshino.
MBE growth and properties of Cr, Fe, and Co-doped GaAs,
Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai,
pp. 46-47,
2000.
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M. Tajima,
K. Yamamoto,
D. Okazawa,
A. Nagashima,
J. Yoshino.
Effect of Mn on the low temperature growth of GaAs and GaMnAs,
Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai,
pp. 29-30,
2000.
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A. Nagashima,
M. Tajima,
J. Yoshino.
Surface structure analysis of GaAs (100)-c(4x4) by LEED IV technique,
Records of 19th Electronic Materials Symposium, Izu-Nagaoka,
pp. 69-70,
2000.
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M. Tajima,
K. Yamamoto,
D. Okazawa,
A. Nagashima,
J. Yoshino.
STM study on low temperature MBE grown GaAs and GaMnAs surfaces,
Records of 19th Electronic Materials Symposium, Izu-Nagaoka,
pp. 75-76,
2000.
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