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中辻寛 2015年 研究業績一覧 (7件 / 221件)
論文
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I. Kokubo,
Y. Yoshiike,
K. Nakatsuji,
H. Hirayama.
Ultra-thin Bi(110) films on Si(111)√3x√3-B substrates,
Physical Review B,
Vol. 91,
p. 075429 (7pages),
Sept. 2015.
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Shunsuke Yoshizawa,
Fumitaka Nakamura,
Alexey A. Taskin,
Takushi Iimori,
Kan Nakatsuji,
Iwao Matsuda,
Yoichi Ando,
Fumio Komori.
Scanning tunneling spectroscopy study of quasiparticle interference on the dual topological insulator Bi1-xSbx,
Physical Review B,
Vol. 91,
No. 4,
pp. 045423,
Jan. 2015.
公式リンク
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Kokubo, I.,
Yoshiike, Y.,
Kan Nakatsuji,
HIROYUKI HIRAYAMA.
Ultrathin Bi(110) films on Si(111) 3 × 3 - B substrates,
Physical Review B - Condensed Matter and Materials Physics,
Vol. 91,
No. 7,
2015.
国際会議発表 (査読有り)
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Y. Takagi,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Fabrication of Monolayer Graphene Using a Liquid Droplet Method,
The 15th International Conference on the Formation of Semiconductor Interfaces (ICFSI-15),
Nov. 2015.
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I. Kokubo,
Y. Yoshiike,
K. Shishikura,
K. Nakatsuji,
H. Hirayama.
Ultra-thin Bi(110) films on Si(111)√3x√3-B substrates,
AVS 62nd International Symposium (AVS62),
Oct. 2015.
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Satoru Tanaka,
Kohei Fukuma,
Kohei Morita,
Shingo Hayashi,
Takashi Kajiwara,
Anton Visikovskiy,
Takushi Iimori,
Koichiro Ienaga,
Koichiro Yaji,
Kan Nakatsuji,
Fumio Komori,
Hirokazu Tanaka,
Akinobu Kanda,
Nguyen T. Cuong,
Susumu Okada.
Quasi-one-dimensional graphene nanostructure on corrugated SiC surfaces,
21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures(EP2DS-21/MSS-17),
Abstract of International Conference on Electronic Properties of Two-Dimensional Systems,
Vol. 21,
July 2015.
国内会議発表 (査読なし・不明)
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飯盛拓嗣,
中辻寛,
宮町俊生,
家永紘一郎,
金聖憲,
田村匡,
豊久宗玄,
福間洸平,
森田康平,
梶原隆司,
林真吾,
Anton Visikovsliy,
田中悟,
間瀬一彦,
小森文夫.
SiC(0001)表面上のナノファセットに形成したグラフェンの角度分解光電子分光,
日本物理学会2015年秋季大会,
日本物理学会講演概要集,
Sept. 2015.
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